Enhancement of bulk second-harmonic generation from silicon nitride films by material composition

K. Koskinen; R. Czaplicki; A. Slablab; T. Ning; A. Hermans; B. Kuyken; V. Mittal; G. S. Murugan; T. Niemi; R. Baets; M. Kauranen

doi:10.1364/OL.42.005030

Enhancement of bulk second-harmonic generation from silicon nitride films by material composition

K. Koskinen, R. Czaplicki, A. Slablab, T. Ning, A. Hermans, B. Kuyken, V. Mittal, G. S. Murugan, T. Niemi, R. Baets, M. Kauranen

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Abstract

We present a comprehensive tensorial characterization of second-harmonic generation from silicon nitride films with varying compositions. The samples were fabricated using plasma-enhanced chemical vapor deposition, and the material composition was varied by the reactive gas mixture in the process. We found a six-fold enhancement between the lowest and highest second-order susceptibility, with the highest value of approximately 5x00A0;pm/V from the most silicon-rich sample. Moreover, the optical losses were found to be sufficiently small (below 6x00A0;dB/cm) for applications. The tensorial results show that all samples retain in-plane isotropy independent of the silicon content, highlighting the controllability of the fabrication process.

Original language	English
Pages (from-to)	5030-5033
Number of pages	4
Journal	Optics Letters
Volume	42
Issue number	23
DOIs	https://doi.org/10.1364/OL.42.005030
Publication status	Published - 1 Dec 2017
Publication type	A1 Journal article-refereed

Keywords

Nonlinear optics
Nonlinear optics, materials
Thin films, optical properties

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10.1364/OL.42.005030

http://hdl.handle.net/1854/LU-8541832

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title = "Enhancement of bulk second-harmonic generation from silicon nitride films by material composition",

abstract = "We present a comprehensive tensorial characterization of second-harmonic generation from silicon nitride films with varying compositions. The samples were fabricated using plasma-enhanced chemical vapor deposition, and the material composition was varied by the reactive gas mixture in the process. We found a six-fold enhancement between the lowest and highest second-order susceptibility, with the highest value of approximately 5x00A0;pm/V from the most silicon-rich sample. Moreover, the optical losses were found to be sufficiently small (below 6x00A0;dB/cm) for applications. The tensorial results show that all samples retain in-plane isotropy independent of the silicon content, highlighting the controllability of the fabrication process.",

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T1 - Enhancement of bulk second-harmonic generation from silicon nitride films by material composition

AU - Koskinen, K.

AU - Czaplicki, R.

AU - Slablab, A.

AU - Ning, T.

AU - Hermans, A.

AU - Kuyken, B.

AU - Mittal, V.

AU - Murugan, G. S.

AU - Niemi, T.

AU - Baets, R.

AU - Kauranen, M.

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PY - 2017/12/1

Y1 - 2017/12/1

N2 - We present a comprehensive tensorial characterization of second-harmonic generation from silicon nitride films with varying compositions. The samples were fabricated using plasma-enhanced chemical vapor deposition, and the material composition was varied by the reactive gas mixture in the process. We found a six-fold enhancement between the lowest and highest second-order susceptibility, with the highest value of approximately 5x00A0;pm/V from the most silicon-rich sample. Moreover, the optical losses were found to be sufficiently small (below 6x00A0;dB/cm) for applications. The tensorial results show that all samples retain in-plane isotropy independent of the silicon content, highlighting the controllability of the fabrication process.

AB - We present a comprehensive tensorial characterization of second-harmonic generation from silicon nitride films with varying compositions. The samples were fabricated using plasma-enhanced chemical vapor deposition, and the material composition was varied by the reactive gas mixture in the process. We found a six-fold enhancement between the lowest and highest second-order susceptibility, with the highest value of approximately 5x00A0;pm/V from the most silicon-rich sample. Moreover, the optical losses were found to be sufficiently small (below 6x00A0;dB/cm) for applications. The tensorial results show that all samples retain in-plane isotropy independent of the silicon content, highlighting the controllability of the fabrication process.

KW - Nonlinear optics

KW - Nonlinear optics, materials

KW - Thin films, optical properties

U2 - 10.1364/OL.42.005030

DO - 10.1364/OL.42.005030

M3 - Article

SN - 0146-9592

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EP - 5033

JO - Optics Letters

JF - Optics Letters

IS - 23

ER -

Enhancement of bulk second-harmonic generation from silicon nitride films by material composition

Abstract

Keywords

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