Epitaxial growth of fcc clusters

S. Valkealahti; U. Näher; M. Manninen

doi:10.1103/PhysRevB.51.11039

Epitaxial growth of fcc clusters

S. Valkealahti^*
, U. Näher
, M. Manninen

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

12 Citations (Scopus)

Abstract

The statistics of epitaxially grown free fcc clusters is studied in a simple growth model, where the clusters have only (111) surfaces, and only one facet grows at a time. The abundance spectrum shows regular oscillations as a function of N1/3 and as a function of N2/3. The former corresponds to octahedral growth pattern, although only an insignificant number of the clusters are perfect octahedra. The latter is a result of the differences in the facet sizes of imperfect octahedra.

Original language	English
Pages (from-to)	11039-11042
Number of pages	4
Journal	Physical Review B
Volume	51
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.51.11039
Publication status	Published - 1 Jan 1995
Externally published	Yes
Publication type	Not Eligible

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.51.11039

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title = "Epitaxial growth of fcc clusters",

abstract = "The statistics of epitaxially grown free fcc clusters is studied in a simple growth model, where the clusters have only (111) surfaces, and only one facet grows at a time. The abundance spectrum shows regular oscillations as a function of N1/3 and as a function of N2/3. The former corresponds to octahedral growth pattern, although only an insignificant number of the clusters are perfect octahedra. The latter is a result of the differences in the facet sizes of imperfect octahedra.",

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AU - Valkealahti, S.

AU - Näher, U.

AU - Manninen, M.

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N2 - The statistics of epitaxially grown free fcc clusters is studied in a simple growth model, where the clusters have only (111) surfaces, and only one facet grows at a time. The abundance spectrum shows regular oscillations as a function of N1/3 and as a function of N2/3. The former corresponds to octahedral growth pattern, although only an insignificant number of the clusters are perfect octahedra. The latter is a result of the differences in the facet sizes of imperfect octahedra.

AB - The statistics of epitaxially grown free fcc clusters is studied in a simple growth model, where the clusters have only (111) surfaces, and only one facet grows at a time. The abundance spectrum shows regular oscillations as a function of N1/3 and as a function of N2/3. The former corresponds to octahedral growth pattern, although only an insignificant number of the clusters are perfect octahedra. The latter is a result of the differences in the facet sizes of imperfect octahedra.

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DO - 10.1103/PhysRevB.51.11039

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JO - Physical Review B

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Epitaxial growth of fcc clusters

Abstract

ASJC Scopus subject areas

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