Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities

Sean L. Rommel, Thomas E. Dillon, Paul R. Berger, Phillip E. Thompson, Karl D. Hobart, Roger Lake, Alan C. Seabaugh

Research output: Contribution to journalArticleScientificpeer-review

29 Citations (Scopus)

Abstract

This study presents the room-temperature operation of δ-doped Si resonant interband tunneling diodes which were fabricated by low-temperature molecular beam epitaxy. Post growth rapid thermal annealing of the samples was found to improve the current-voltage (I-V) characteristics. Optimal performance was observed for a 600°C 1 min anneal, yielding a peak-to-valley current ratio (PVCR) as high as 1.38 with a peak current density (Jp) as high as 1.42 kA/cm2 for a device with a 4-nm intrinsic Si tunnel barrier. When the tunnel barrier was reduced to 2 nm, a PVCR of 1.41 with a Jp as high as 10.8 kA/cm2 was observed. The devices withstood a series of burn-in measurements without noticeable degradation in either the Jp or PVCR. The structures presented are strain-free, and are compatible with a standard CMOS or HBT process.

Original languageEnglish
Pages (from-to)329-331
Number of pages3
JournalIEEE Electron Device Letters
Volume20
Issue number7
DOIs
Publication statusPublished - Jul 1999
Externally publishedYes
Publication typeA1 Journal article-refereed

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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