Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes

Sean L. Rommel; David N. Erby; Wei Gao; Paul R. Berger; George J. Zydzik; W. W. Rhodes; H. M. O'Bryan; Deborah L. Sivco; Alfred Y. Cho

Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes

Sean L. Rommel, David N. Erby, Wei Gao, Paul R. Berger, George J. Zydzik, W. W. Rhodes, H. M. O'Bryan, Deborah L. Sivco, Alfred Y. Cho

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

1 Citation (Scopus)

Abstract

Metal-semiconductor-metal (MSM) photodiodes with electrodes fabricated from the transparent conductor cadmium tin oxide (CTO) have been shown to double photoresponsivity. Their bandwidths, however, are significantly lower than those of MSMs fabricated with standard Ti/Au contacts. Though MSMs are generally believed to be limited by the transit time of electrons, it is possible the larger resistivity of CTO has become a significant factor, making the MSMs RC time constant limited instead. Previous models of MSMs only account for one of the two back-to-back Schottky diodes. A new model which takes into account both the forward and reverse biased junctions has been developed from the small signal model of a Schottky diode. This new model was fit to data obtained from S-parameter measurements, and incorporates both the transit time response and RC time constant response.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Gail J. Brown, Manijeh Razeghi
Pages	86-91
Number of pages	6
Publication status	Published - 1997
Externally published	Yes
Publication type	A4 Article in conference proceedings
Event	Photodetectors: Materials and Devices II - San Jose, CA, USA Duration: 12 Feb 1997 → 14 Feb 1997

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2999
ISSN (Print)	0277-786X

Conference

Conference	Photodetectors: Materials and Devices II
City	San Jose, CA, USA
Period	12/02/97 → 14/02/97

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

Rommel, S. L., Erby, D. N., Gao, W., Berger, P. R., Zydzik, G. J., Rhodes, W. W., O'Bryan, H. M., Sivco, D. L., & Cho, A. Y. (1997). Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes. In G. J. Brown, & M. Razeghi (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 86-91). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2999).

@inproceedings{c84cb56fc10a4668b595bf4b0eed8f39,

title = "Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes",

abstract = "Metal-semiconductor-metal (MSM) photodiodes with electrodes fabricated from the transparent conductor cadmium tin oxide (CTO) have been shown to double photoresponsivity. Their bandwidths, however, are significantly lower than those of MSMs fabricated with standard Ti/Au contacts. Though MSMs are generally believed to be limited by the transit time of electrons, it is possible the larger resistivity of CTO has become a significant factor, making the MSMs RC time constant limited instead. Previous models of MSMs only account for one of the two back-to-back Schottky diodes. A new model which takes into account both the forward and reverse biased junctions has been developed from the small signal model of a Schottky diode. This new model was fit to data obtained from S-parameter measurements, and incorporates both the transit time response and RC time constant response.",

author = "Rommel, {Sean L.} and Erby, {David N.} and Wei Gao and Berger, {Paul R.} and Zydzik, {George J.} and Rhodes, {W. W.} and O'Bryan, {H. M.} and Sivco, {Deborah L.} and Cho, {Alfred Y.}",

year = "1997",

language = "English",

isbn = "0819424102",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

pages = "86--91",

editor = "Brown, {Gail J.} and Manijeh Razeghi",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

Rommel, SL, Erby, DN, Gao, W, Berger, PR, Zydzik, GJ, Rhodes, WW, O'Bryan, HM, Sivco, DL & Cho, AY 1997, Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes. in GJ Brown & M Razeghi (eds), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 2999, pp. 86-91, Photodetectors: Materials and Devices II, San Jose, CA, USA, 12/02/97.

Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes. / Rommel, Sean L.; Erby, David N.; Gao, Wei et al.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Gail J. Brown; Manijeh Razeghi. 1997. p. 86-91 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2999).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes

AU - Rommel, Sean L.

AU - Erby, David N.

AU - Gao, Wei

AU - Berger, Paul R.

AU - Zydzik, George J.

AU - Rhodes, W. W.

AU - O'Bryan, H. M.

AU - Sivco, Deborah L.

AU - Cho, Alfred Y.

PY - 1997

Y1 - 1997

N2 - Metal-semiconductor-metal (MSM) photodiodes with electrodes fabricated from the transparent conductor cadmium tin oxide (CTO) have been shown to double photoresponsivity. Their bandwidths, however, are significantly lower than those of MSMs fabricated with standard Ti/Au contacts. Though MSMs are generally believed to be limited by the transit time of electrons, it is possible the larger resistivity of CTO has become a significant factor, making the MSMs RC time constant limited instead. Previous models of MSMs only account for one of the two back-to-back Schottky diodes. A new model which takes into account both the forward and reverse biased junctions has been developed from the small signal model of a Schottky diode. This new model was fit to data obtained from S-parameter measurements, and incorporates both the transit time response and RC time constant response.

AB - Metal-semiconductor-metal (MSM) photodiodes with electrodes fabricated from the transparent conductor cadmium tin oxide (CTO) have been shown to double photoresponsivity. Their bandwidths, however, are significantly lower than those of MSMs fabricated with standard Ti/Au contacts. Though MSMs are generally believed to be limited by the transit time of electrons, it is possible the larger resistivity of CTO has become a significant factor, making the MSMs RC time constant limited instead. Previous models of MSMs only account for one of the two back-to-back Schottky diodes. A new model which takes into account both the forward and reverse biased junctions has been developed from the small signal model of a Schottky diode. This new model was fit to data obtained from S-parameter measurements, and incorporates both the transit time response and RC time constant response.

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M3 - Conference contribution

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SN - 0819424102

T3 - Proceedings of SPIE - The International Society for Optical Engineering

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BT - Proceedings of SPIE - The International Society for Optical Engineering

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ER -

Rommel SL, Erby DN, Gao W, Berger PR, Zydzik GJ, Rhodes WW et al. Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes. In Brown GJ, Razeghi M, editors, Proceedings of SPIE - The International Society for Optical Engineering. 1997. p. 86-91. (Proceedings of SPIE - The International Society for Optical Engineering).

Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes

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