Exciton localization and structural disorder of GaAs1-xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates

G. A. Prando; V. Orsi Gordo; J. Puustinen; J. Hilska; H. M. Alghamdi; G. Som; M. Gunes; M. Akyol; S. Souto; A. D. Rodrigues; H. V.A. Galeti; M. Henini; Y. Galvão Gobato; M. Guina

doi:10.1088/1361-6641/aad02e

Exciton localization and structural disorder of GaAs_1-xBi_x/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates

G. A. Prando, V. Orsi Gordo, J. Puustinen, J. Hilska, H. M. Alghamdi, G. Som, M. Gunes, M. Akyol, S. Souto, A. D. Rodrigues, H. V.A. Galeti, M. Henini, Y. Galvão Gobato, M. Guina

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7 Citations (Scopus)

Abstract

In this work, we have investigated the structural and optical properties of GaAs_(1-x)Bi_x/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311)B substrates using x-ray diffraction, atomic force microscopy, Fourier-transform Raman (FT-Raman) and photoluminescence spectroscopy techniques. The FT-Raman results revealed a decrease of the relative intensity ratio of transverse and longitudinal optical modes with the increase of Bi concentration, which indicates a reduction of the structural disorder with increasing Bi incorporation. In addition, the PL results show an enhancement of the optical efficiency of the structures as the Bi concentration is increased due to important effects of exciton localization related to Bi defects, nonradiative centers and alloy disorder. These results provide evidence that Bi is incorporated effectively into the QW region. Finally, the temperature dependence of the PL spectra has evidenced two distinct types of defects related to the Bi incorporation, namely Bi clusters and pairs, and alloy disorder and potential fluctuation.

Original language	English
Article number	084002
Journal	Semiconductor Science and Technology
Volume	33
Issue number	8
DOIs	https://doi.org/10.1088/1361-6641/aad02e
Publication status	Published - 17 Jul 2018
Publication type	A1 Journal article-refereed

Keywords

dilute bismide
exciton localization
photoluminescence
structural disorder

Publication forum classification

Publication forum level 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1088/1361-6641/aad02e

Cite this

Prando, G. A., Orsi Gordo, V., Puustinen, J., Hilska, J., Alghamdi, H. M., Som, G., Gunes, M., Akyol, M., Souto, S., Rodrigues, A. D., Galeti, H. V. A., Henini, M., Gobato, Y. G., & Guina, M. (2018). Exciton localization and structural disorder of GaAs_1-xBi_x/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, 33(8), Article 084002. https://doi.org/10.1088/1361-6641/aad02e

@article{4b385475d33e40afa397e7bd70456ce2,

title = "Exciton localization and structural disorder of GaAs1-xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates",

abstract = "In this work, we have investigated the structural and optical properties of GaAs(1-x)Bix/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311)B substrates using x-ray diffraction, atomic force microscopy, Fourier-transform Raman (FT-Raman) and photoluminescence spectroscopy techniques. The FT-Raman results revealed a decrease of the relative intensity ratio of transverse and longitudinal optical modes with the increase of Bi concentration, which indicates a reduction of the structural disorder with increasing Bi incorporation. In addition, the PL results show an enhancement of the optical efficiency of the structures as the Bi concentration is increased due to important effects of exciton localization related to Bi defects, nonradiative centers and alloy disorder. These results provide evidence that Bi is incorporated effectively into the QW region. Finally, the temperature dependence of the PL spectra has evidenced two distinct types of defects related to the Bi incorporation, namely Bi clusters and pairs, and alloy disorder and potential fluctuation.",

keywords = "dilute bismide, exciton localization, photoluminescence, structural disorder",

author = "Prando, {G. A.} and {Orsi Gordo}, V. and J. Puustinen and J. Hilska and Alghamdi, {H. M.} and G. Som and M. Gunes and M. Akyol and S. Souto and Rodrigues, {A. D.} and Galeti, {H. V.A.} and M. Henini and Gobato, {Y. Galv{\~a}o} and M. Guina",

year = "2018",

month = jul,

day = "17",

doi = "10.1088/1361-6641/aad02e",

language = "English",

volume = "33",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "8",

}

Prando, GA, Orsi Gordo, V, Puustinen, J, Hilska, J, Alghamdi, HM, Som, G, Gunes, M, Akyol, M, Souto, S, Rodrigues, AD, Galeti, HVA, Henini, M, Gobato, YG & Guina, M 2018, 'Exciton localization and structural disorder of GaAs_1-xBi_x/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates', Semiconductor Science and Technology, vol. 33, no. 8, 084002. https://doi.org/10.1088/1361-6641/aad02e

TY - JOUR

T1 - Exciton localization and structural disorder of GaAs1-xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates

AU - Prando, G. A.

AU - Orsi Gordo, V.

AU - Puustinen, J.

AU - Hilska, J.

AU - Alghamdi, H. M.

AU - Som, G.

AU - Gunes, M.

AU - Akyol, M.

AU - Souto, S.

AU - Rodrigues, A. D.

AU - Galeti, H. V.A.

AU - Henini, M.

AU - Gobato, Y. Galvão

AU - Guina, M.

PY - 2018/7/17

Y1 - 2018/7/17

N2 - In this work, we have investigated the structural and optical properties of GaAs(1-x)Bix/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311)B substrates using x-ray diffraction, atomic force microscopy, Fourier-transform Raman (FT-Raman) and photoluminescence spectroscopy techniques. The FT-Raman results revealed a decrease of the relative intensity ratio of transverse and longitudinal optical modes with the increase of Bi concentration, which indicates a reduction of the structural disorder with increasing Bi incorporation. In addition, the PL results show an enhancement of the optical efficiency of the structures as the Bi concentration is increased due to important effects of exciton localization related to Bi defects, nonradiative centers and alloy disorder. These results provide evidence that Bi is incorporated effectively into the QW region. Finally, the temperature dependence of the PL spectra has evidenced two distinct types of defects related to the Bi incorporation, namely Bi clusters and pairs, and alloy disorder and potential fluctuation.

AB - In this work, we have investigated the structural and optical properties of GaAs(1-x)Bix/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311)B substrates using x-ray diffraction, atomic force microscopy, Fourier-transform Raman (FT-Raman) and photoluminescence spectroscopy techniques. The FT-Raman results revealed a decrease of the relative intensity ratio of transverse and longitudinal optical modes with the increase of Bi concentration, which indicates a reduction of the structural disorder with increasing Bi incorporation. In addition, the PL results show an enhancement of the optical efficiency of the structures as the Bi concentration is increased due to important effects of exciton localization related to Bi defects, nonradiative centers and alloy disorder. These results provide evidence that Bi is incorporated effectively into the QW region. Finally, the temperature dependence of the PL spectra has evidenced two distinct types of defects related to the Bi incorporation, namely Bi clusters and pairs, and alloy disorder and potential fluctuation.

KW - dilute bismide

KW - exciton localization

KW - photoluminescence

KW - structural disorder

U2 - 10.1088/1361-6641/aad02e

DO - 10.1088/1361-6641/aad02e

M3 - Article

AN - SCOPUS:85051332383

SN - 0268-1242

VL - 33

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

M1 - 084002

ER -