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Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time

  • Tyler A. Growden
  • , E. R. Brown
  • , Weidong Zhang
  • , Ravi Droopad
  • , Paul R. Berger*
  • *Corresponding author for this work

    Research output: Contribution to journal › Article › Scientific › peer-review

    8 Citations (Scopus)

    Abstract

    An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In0.53Ga0.47As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10%-90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.

    Original languageEnglish
    Article number153506
    JournalApplied Physics Letters
    Volume107
    Issue number15
    DOIs
    Publication statusPublished - 12 Oct 2015
    Publication typeA1 Journal article-refereed

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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