Fabrication of topographically microstructured titanium silicide interface for advanced photonic applications

Markku Hannula; Kimmo  Lahtonen; Harri Ali-Löytty; A.A. Zakharov; Tero Isotalo; Jesse Saari; Mika Valden

doi:10.1016/j.scriptamat.2016.03.016

Fabrication of topographically microstructured titanium silicide interface for advanced photonic applications

Markku Hannula, Kimmo Lahtonen, Harri Ali-Löytty, A.A. Zakharov, Tero Isotalo, Jesse Saari, Mika Valden

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

We present a widely scalable, high temperature post-growth annealing method for converting ultra-thin films of TiO2 grown by atomic layer deposition to topographically microstructured titanium silicide (TiSi). The photoemission electron microscopy results reveal that the transformation from TiO2 to TiSi at 950 °C proceeds via island formation. Inside the islands, TiO2 reduction and Si diffusion play important roles in the formation of the highly topographically microstructured TiSi interface with laterally nonuniform barrier height contact. This is advantageous for efficient charge transfer in Si-based heterostructures for photovoltaic and photoelectrochemical applications.

Original language	English
Pages (from-to)	76-81
Number of pages	6
Journal	Scripta Materialia
Volume	119
DOIs	https://doi.org/10.1016/j.scriptamat.2016.03.016
Publication status	Published - Jul 2016
Publication type	A1 Journal article-refereed

Keywords

Atomic layer deposition (ALD)
X-ray photoelectron spectroscopy (XPS)
Transition metal silicides
Semiconductors
Surface modification

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Publication forum level 3

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.scriptamat.2016.03.016

Hannula et al - Fabrication of topographically microstructured titanium silicide
© 2016. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
Accepted author manuscript, 8.25 MB

http://urn.fi/URN:NBN:fi:tty-201605274188

Cite this

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title = "Fabrication of topographically microstructured titanium silicide interface for advanced photonic applications",

abstract = "We present a widely scalable, high temperature post-growth annealing method for converting ultra-thin films of TiO2 grown by atomic layer deposition to topographically microstructured titanium silicide (TiSi). The photoemission electron microscopy results reveal that the transformation from TiO2 to TiSi at 950 °C proceeds via island formation. Inside the islands, TiO2 reduction and Si diffusion play important roles in the formation of the highly topographically microstructured TiSi interface with laterally nonuniform barrier height contact. This is advantageous for efficient charge transfer in Si-based heterostructures for photovoltaic and photoelectrochemical applications.",

keywords = "Atomic layer deposition (ALD), X-ray photoelectron spectroscopy (XPS), Transition metal silicides, Semiconductors, Surface modification",

author = "Markku Hannula and Kimmo Lahtonen and Harri Ali-L{\"o}ytty and A.A. Zakharov and Tero Isotalo and Jesse Saari and Mika Valden",

year = "2016",

month = jul,

doi = "10.1016/j.scriptamat.2016.03.016",

language = "English",

volume = "119",

pages = "76--81",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Elsevier",

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TY - JOUR

T1 - Fabrication of topographically microstructured titanium silicide interface for advanced photonic applications

AU - Hannula, Markku

AU - Lahtonen, Kimmo

AU - Ali-Löytty, Harri

AU - Zakharov, A.A.

AU - Isotalo, Tero

AU - Saari, Jesse

AU - Valden, Mika

PY - 2016/7

Y1 - 2016/7

N2 - We present a widely scalable, high temperature post-growth annealing method for converting ultra-thin films of TiO2 grown by atomic layer deposition to topographically microstructured titanium silicide (TiSi). The photoemission electron microscopy results reveal that the transformation from TiO2 to TiSi at 950 °C proceeds via island formation. Inside the islands, TiO2 reduction and Si diffusion play important roles in the formation of the highly topographically microstructured TiSi interface with laterally nonuniform barrier height contact. This is advantageous for efficient charge transfer in Si-based heterostructures for photovoltaic and photoelectrochemical applications.

AB - We present a widely scalable, high temperature post-growth annealing method for converting ultra-thin films of TiO2 grown by atomic layer deposition to topographically microstructured titanium silicide (TiSi). The photoemission electron microscopy results reveal that the transformation from TiO2 to TiSi at 950 °C proceeds via island formation. Inside the islands, TiO2 reduction and Si diffusion play important roles in the formation of the highly topographically microstructured TiSi interface with laterally nonuniform barrier height contact. This is advantageous for efficient charge transfer in Si-based heterostructures for photovoltaic and photoelectrochemical applications.

KW - Atomic layer deposition (ALD)

KW - X-ray photoelectron spectroscopy (XPS)

KW - Transition metal silicides

KW - Semiconductors

KW - Surface modification

U2 - 10.1016/j.scriptamat.2016.03.016

DO - 10.1016/j.scriptamat.2016.03.016

M3 - Article

SN - 1359-6462

VL - 119

SP - 76

EP - 81

JO - Scripta Materialia

JF - Scripta Materialia

ER -

Fabrication of topographically microstructured titanium silicide interface for advanced photonic applications

Abstract

Keywords

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UN SDGs

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