Far-field, efficiency and loss of 980nm InGaAs/GaInAsP/GaInP SCH quantum well lasers

G. Zhang, A. Ovtchinnikov, J. Näppi, K. Smekalin, P. Savolainen, M. Pessa, H. Asonen

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Translated title of the contribution	Far-field, efficiency and loss of 980nm InGaAs/GaInAsP/GaInP SCH quantum well lasers
Original language	English
Pages (from-to)	489-491
Journal	Electronics Letters
Volume	33
Issue number	6
Publication status	Published - 1997
Publication type	A1 Journal article-refereed

Publication forum classification

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title = "Far-field, efficiency and loss of 980nm InGaAs/GaInAsP/GaInP SCH quantum well lasers",

author = "G. Zhang and A. Ovtchinnikov and J. N{\"a}ppi and K. Smekalin and P. Savolainen and M. Pessa and H. Asonen",

note = "Contribution: organisation=fys,FACT1=1",

year = "1997",

language = "English",

volume = "33",

pages = "489--491",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons",

number = "6",

}

TY - JOUR

T1 - Far-field, efficiency and loss of 980nm InGaAs/GaInAsP/GaInP SCH quantum well lasers

AU - Zhang, G.

AU - Ovtchinnikov, A.

AU - Näppi, J.

AU - Smekalin, K.

AU - Savolainen, P.

AU - Pessa, M.

AU - Asonen, H.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1997

Y1 - 1997

M3 - Article

SN - 0013-5194

VL - 33

SP - 489

EP - 491

JO - Electronics Letters

JF - Electronics Letters

IS - 6

ER -