Gain characteristics of strained-layer InGaAs/GaAs quantum well lasers

G. Zhang, M. Pessa, D. Ahn

    Research output: Contribution to journal › Article › Scientific › peer-review

    5 Citations (Scopus)
    Translated title of the contributionGain characteristics of strained-layer InGaAs/GaAs quantum well lasers
    Original languageEnglish
    JournalPhys. Stat. Sol. (b)
    Volume176
    Publication statusPublished - 1993
    Publication typeA1 Journal article-refereed

    Publication forum classification

    • No publication forum level

    Cite this