GaInAsSb/AlGa(In)AsSb type I quantum wells emitting in 3 μm range for application in superluminescent diodes

M. Kurka; M. Dyksik; S. Suomalainen; E. Koivusalo; M. Guina; M. Motyka

doi:10.1016/j.optmat.2019.03.036

GaInAsSb/AlGa(In)AsSb type I quantum wells emitting in 3 μm range for application in superluminescent diodes

M. Kurka^*
, M. Dyksik
, S. Suomalainen
, E. Koivusalo
, M. Guina
, M. Motyka

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

5 Citations (Scopus)

Abstract

In this paper, we present results of Fourier-transformed photoluminescence measurements of quaternary GaInAsSb quantum wells with quinary AlGaInAsSb barriers grown on GaSb substrate, designed for spectral range of mid-infrared. Here, we show an emission shift towards longer wavelength as a result of incorporation of indium into the quantum wells reaching up to 3 μm at room temperature (RT). Additionally, we have observed an additional low-energy photoluminescence signal with maximum wavelength of 3.5 μm at RT, which we have attributed as states localised on the layer interfaces. The activation energy of carriers trapped in those states is estimated to be 35 meV.

Original language	English
Pages (from-to)	274-278
Number of pages	5
Journal	Optical Materials
Volume	91
DOIs	https://doi.org/10.1016/j.optmat.2019.03.036
Publication status	Published - 1 May 2019
Publication type	A1 Journal article-refereed

Keywords

Fourier-transformed spectroscopy
MBE
Optical gas sensing
Photoluminescence
Superluminescent diodes

Publication forum classification

Publication forum level 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Computer Science
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1016/j.optmat.2019.03.036

Cite this

@article{a7a3bafffa59479d8ce23163db92da83,

title = "GaInAsSb/AlGa(In)AsSb type I quantum wells emitting in 3 μm range for application in superluminescent diodes",

abstract = "In this paper, we present results of Fourier-transformed photoluminescence measurements of quaternary GaInAsSb quantum wells with quinary AlGaInAsSb barriers grown on GaSb substrate, designed for spectral range of mid-infrared. Here, we show an emission shift towards longer wavelength as a result of incorporation of indium into the quantum wells reaching up to 3 μm at room temperature (RT). Additionally, we have observed an additional low-energy photoluminescence signal with maximum wavelength of 3.5 μm at RT, which we have attributed as states localised on the layer interfaces. The activation energy of carriers trapped in those states is estimated to be 35 meV.",

keywords = "Fourier-transformed spectroscopy, MBE, Optical gas sensing, Photoluminescence, Superluminescent diodes",

author = "M. Kurka and M. Dyksik and S. Suomalainen and E. Koivusalo and M. Guina and M. Motyka",

year = "2019",

month = may,

day = "1",

doi = "10.1016/j.optmat.2019.03.036",

language = "English",

volume = "91",

pages = "274--278",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - GaInAsSb/AlGa(In)AsSb type I quantum wells emitting in 3 μm range for application in superluminescent diodes

AU - Kurka, M.

AU - Dyksik, M.

AU - Suomalainen, S.

AU - Koivusalo, E.

AU - Guina, M.

AU - Motyka, M.

PY - 2019/5/1

Y1 - 2019/5/1

N2 - In this paper, we present results of Fourier-transformed photoluminescence measurements of quaternary GaInAsSb quantum wells with quinary AlGaInAsSb barriers grown on GaSb substrate, designed for spectral range of mid-infrared. Here, we show an emission shift towards longer wavelength as a result of incorporation of indium into the quantum wells reaching up to 3 μm at room temperature (RT). Additionally, we have observed an additional low-energy photoluminescence signal with maximum wavelength of 3.5 μm at RT, which we have attributed as states localised on the layer interfaces. The activation energy of carriers trapped in those states is estimated to be 35 meV.

AB - In this paper, we present results of Fourier-transformed photoluminescence measurements of quaternary GaInAsSb quantum wells with quinary AlGaInAsSb barriers grown on GaSb substrate, designed for spectral range of mid-infrared. Here, we show an emission shift towards longer wavelength as a result of incorporation of indium into the quantum wells reaching up to 3 μm at room temperature (RT). Additionally, we have observed an additional low-energy photoluminescence signal with maximum wavelength of 3.5 μm at RT, which we have attributed as states localised on the layer interfaces. The activation energy of carriers trapped in those states is estimated to be 35 meV.

KW - Fourier-transformed spectroscopy

KW - MBE

KW - Optical gas sensing

KW - Photoluminescence

KW - Superluminescent diodes

U2 - 10.1016/j.optmat.2019.03.036

DO - 10.1016/j.optmat.2019.03.036

M3 - Article

AN - SCOPUS:85063381328

SN - 0925-3467

VL - 91

SP - 274

EP - 278

JO - Optical Materials

JF - Optical Materials

ER -

GaInAsSb/AlGa(In)AsSb type I quantum wells emitting in 3 μm range for application in superluminescent diodes

Abstract

Keywords

Publication forum classification

ASJC Scopus subject areas

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GaInAsSb/AlGa(In)AsSb type I quantum wells emitting in 3 μm range for application in superluminescent diodes