Gas-source molecular beam epitaxy growth of GaxIn1-xAsP1-y on GaAs for laser diodes

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Translated title of the contribution	Gas-source molecular beam epitaxy growth of GaxIn1-xAsP1-y on GaAs for laser diodes
Original language	English
Title of host publication	Proceedings of the Seventh European Workshop on Molecular Beam Epitaxy, March 7-10, 1993, Bardonecchia, Italy
Place of Publication	Bardonecchia, Italy
Publication status	Published - 1994
Publication type	B3 Article in conference proceedings

Publication forum classification

@inproceedings{975ff6b70fac4de385c2bd744682e07c,

title = "Gas-source molecular beam epitaxy growth of GaxIn1-xAsP1-y on GaAs for laser diodes",

author = "G. Zhang and H. Asonen and M. Pessa",

note = "Contribution: organisation=fys,FACT1=1",

year = "1994",

language = "English",

booktitle = "Proceedings of the Seventh European Workshop on Molecular Beam Epitaxy, March 7-10, 1993, Bardonecchia, Italy",

}

TY - GEN

T1 - Gas-source molecular beam epitaxy growth of GaxIn1-xAsP1-y on GaAs for laser diodes

AU - Zhang, G.

AU - Asonen, H.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1994

Y1 - 1994

M3 - Conference contribution

BT - Proceedings of the Seventh European Workshop on Molecular Beam Epitaxy, March 7-10, 1993, Bardonecchia, Italy

CY - Bardonecchia, Italy

ER -