Gas-source molecular beam epitaxy of lattice-matched GaxIn1-xAsyP1-y on GaAs over the entire composition range

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Translated title of the contribution	Gas-source molecular beam epitaxy of lattice-matched GaxIn1-xAsyP1-y on GaAs over the entire composition range
Original language	English
Pages (from-to)	607-611
Journal	Journal of Crystal Growth
Volume	150
Publication status	Published - 1995
Publication type	A1 Journal article-refereed

Publication forum classification

@article{7f6eb83bcbf94060878b0efb050aa2c8,

title = "Gas-source molecular beam epitaxy of lattice-matched GaxIn1-xAsyP1-y on GaAs over the entire composition range",

author = "G. Zhang and M. Pessa and K. Hjelt and H. Collan and T. Tuomi",

note = "Contribution: organisation=fys,FACT1=1",

year = "1995",

language = "English",

volume = "150",

pages = "607--611",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Gas-source molecular beam epitaxy of lattice-matched GaxIn1-xAsyP1-y on GaAs over the entire composition range

AU - Zhang, G.

AU - Pessa, M.

AU - Hjelt, K.

AU - Collan, H.

AU - Tuomi, T.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1995

Y1 - 1995

M3 - Article

SN - 0022-0248

VL - 150

SP - 607

EP - 611

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -