GaSb-Based Semiconductor Disk Laser With 130-nm Tuning Range at 2.5 µm

Jari Nikkinen, Jonna Paajaste, Riku Koskinen, Soile Suomalainen, Oleg G. Okhotnikov

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8 Citations (Scopus)

Translated title of the contribution	GaSb-Based Semiconductor Disk Laser With 130-nm Tuning Range at 2.5 µm
Original language	English
Pages (from-to)	777-779
Journal	IEEE Photonics Technology Letters
Volume	23
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2011.2122249
Publication status	Published - 2011
Publication type	A1 Journal article-refereed

Publication forum classification

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title = "GaSb-Based Semiconductor Disk Laser With 130-nm Tuning Range at 2.5 µm",

author = "Jari Nikkinen and Jonna Paajaste and Riku Koskinen and Soile Suomalainen and Okhotnikov, {Oleg G.}",

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T1 - GaSb-Based Semiconductor Disk Laser With 130-nm Tuning Range at 2.5 µm

AU - Nikkinen, Jari

AU - Paajaste, Jonna

AU - Koskinen, Riku

AU - Suomalainen, Soile

AU - Okhotnikov, Oleg G.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2011

Y1 - 2011

U2 - 10.1109/LPT.2011.2122249

DO - 10.1109/LPT.2011.2122249

M3 - Article

SN - 1041-1135

VL - 23

SP - 777

EP - 779

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

ER -