GaSb superluminescent diodes with broadband emission at 2.55 μ m

Nouman Zia; Jukka Viheriälä; Eero Koivusalo; Heikki Virtanen; Antti Aho; Soile Suomalainen; Mircea Guina

doi:10.1063/1.5015974

GaSb superluminescent diodes with broadband emission at 2.55 μ m

Nouman Zia^*
, Jukka Viheriälä
, Eero Koivusalo
, Heikki Virtanen
, Antti Aho
, Soile Suomalainen
, Mircea Guina

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

We report the development of superluminescent diodes (SLDs) emitting mW-level output power in a broad spectrum centered at a wavelength of 2.55 μm. The emitting structure consists of two compressively strained GaInAsSb/GaSb-quantum wells placed within a lattice-matched AlGaAsSb waveguide. An average output power of more than 3 mW and a peak power of 38 mW are demonstrated at room temperature under pulsed operation. A cavity suppression element is used to prevent lasing at high current injection allowing emission in a broad spectrum with a full width at half maximum (FWHM) of 124 nm. The measured far-field of the SLD confirms a good beam quality at different currents. These devices open further development possibilities in the field of spectroscopy, enabling, for example, detection of complex molecules and mixtures of gases that manifest a complex absorption spectrum over a broad spectral range.

Original language	English
Article number	051106
Journal	Applied Physics Letters
Volume	112
Issue number	5
DOIs	https://doi.org/10.1063/1.5015974
Publication status	Published - Jan 2018
Publication type	A1 Journal article-refereed

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Publication forum level 2

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "GaSb superluminescent diodes with broadband emission at 2.55 μ m",

abstract = "We report the development of superluminescent diodes (SLDs) emitting mW-level output power in a broad spectrum centered at a wavelength of 2.55 μm. The emitting structure consists of two compressively strained GaInAsSb/GaSb-quantum wells placed within a lattice-matched AlGaAsSb waveguide. An average output power of more than 3 mW and a peak power of 38 mW are demonstrated at room temperature under pulsed operation. A cavity suppression element is used to prevent lasing at high current injection allowing emission in a broad spectrum with a full width at half maximum (FWHM) of 124 nm. The measured far-field of the SLD confirms a good beam quality at different currents. These devices open further development possibilities in the field of spectroscopy, enabling, for example, detection of complex molecules and mixtures of gases that manifest a complex absorption spectrum over a broad spectral range.",

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T1 - GaSb superluminescent diodes with broadband emission at 2.55 μ m

AU - Zia, Nouman

AU - Viheriälä, Jukka

AU - Koivusalo, Eero

AU - Virtanen, Heikki

AU - Aho, Antti

AU - Suomalainen, Soile

AU - Guina, Mircea

PY - 2018/1

Y1 - 2018/1

N2 - We report the development of superluminescent diodes (SLDs) emitting mW-level output power in a broad spectrum centered at a wavelength of 2.55 μm. The emitting structure consists of two compressively strained GaInAsSb/GaSb-quantum wells placed within a lattice-matched AlGaAsSb waveguide. An average output power of more than 3 mW and a peak power of 38 mW are demonstrated at room temperature under pulsed operation. A cavity suppression element is used to prevent lasing at high current injection allowing emission in a broad spectrum with a full width at half maximum (FWHM) of 124 nm. The measured far-field of the SLD confirms a good beam quality at different currents. These devices open further development possibilities in the field of spectroscopy, enabling, for example, detection of complex molecules and mixtures of gases that manifest a complex absorption spectrum over a broad spectral range.

AB - We report the development of superluminescent diodes (SLDs) emitting mW-level output power in a broad spectrum centered at a wavelength of 2.55 μm. The emitting structure consists of two compressively strained GaInAsSb/GaSb-quantum wells placed within a lattice-matched AlGaAsSb waveguide. An average output power of more than 3 mW and a peak power of 38 mW are demonstrated at room temperature under pulsed operation. A cavity suppression element is used to prevent lasing at high current injection allowing emission in a broad spectrum with a full width at half maximum (FWHM) of 124 nm. The measured far-field of the SLD confirms a good beam quality at different currents. These devices open further development possibilities in the field of spectroscopy, enabling, for example, detection of complex molecules and mixtures of gases that manifest a complex absorption spectrum over a broad spectral range.

U2 - 10.1063/1.5015974

DO - 10.1063/1.5015974

M3 - Article

AN - SCOPUS:85041351210

SN - 0003-6951

VL - 112

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 051106

ER -

GaSb superluminescent diodes with broadband emission at 2.55 μ m

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