Abstract
We report on the fabrication and characterization of Ge solar cells on glass realized by layer transfer and epitaxial regrowth. These devices exhibit typical conversion efficiency exceeding 2.4% under AM1.5 irradiation and maximum efficiency of 3.7% under concentrated excitation. This approach enables flexible and affordable multi-junction engineering for solar energy conversion.
| Original language | English |
|---|---|
| Title of host publication | 8th IEEE International Conference on Group IV Photonics, GFP 2011 |
| Pages | 255-257 |
| Number of pages | 3 |
| DOIs | |
| Publication status | Published - 2011 |
| Publication type | A4 Article in conference proceedings |
| Event | 8th IEEE International Conference on Group IV Photonics, GFP 2011 - London, United Kingdom Duration: 14 Sept 2011 → 16 Sept 2011 |
Conference
| Conference | 8th IEEE International Conference on Group IV Photonics, GFP 2011 |
|---|---|
| Country/Territory | United Kingdom |
| City | London |
| Period | 14/09/11 → 16/09/11 |
Keywords
- germanium
- solar cells
- wafer bonding
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Ceramics and Composites
- Electronic, Optical and Magnetic Materials
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