Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, N. A. Cherkashin, Yu M. Shernyakov, A. S. Payusov, N. Y. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, A. Hoffmann

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    5 Citations (Scopus)

    Abstract

    We report on green (550-560 nm) electroluminescence (EL) from (Al<inf>0.5</inf>Ga<inf>0.5</inf>)<inf>0.5</inf>In<inf>0.5</inf>P-(Al<inf>0.8</inf>Ga<inf>0.2</inf>)<inf>0.5</inf>In<inf>0.5</inf>P double p-i-n heterostructures with monolayer-scale tensile strained GaP insertions in the cladding layers and light-emitting diodes (LEDs) based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. Cross-sectional transmission electron microscopy studies indicate that GaP insertions are flat, thus the GaP-barrier substrate orientation-dependent heights should match the predictions of the flat model. At moderate current densities (∼500 A/cm<sup>2</sup>) the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (∼550 nm at room temperature). At high current densities (>1 kA/cm<sup>2</sup>) a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4 kA/cm<sup>2</sup>, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14 kA/cm<sup>2</sup>. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p- doped (Al<inf>0.8</inf>Ga<inf>0.2</inf>)<inf>0.5</inf>In<inf>0.5</inf>P cladding layers.

    Original languageEnglish
    Title of host publicationProceedings of SPIE
    Subtitle of host publicationLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX
    PublisherSPIE
    Volume9383
    ISBN (Print)9781628414738
    DOIs
    Publication statusPublished - 2015
    Publication typeA4 Article in a conference publication
    EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX - San Francisco, United States
    Duration: 10 Feb 201512 Feb 2015

    Conference

    ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX
    CountryUnited States
    CitySan Francisco
    Period10/02/1512/02/15

    Keywords

    • high-index surface
    • light-emitting diode
    • tensile strained barrier

    Publication forum classification

    • Publication forum level 0

    ASJC Scopus subject areas

    • Applied Mathematics
    • Computer Science Applications
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Fingerprint Dive into the research topics of 'Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces'. Together they form a unique fingerprint.

    Cite this