Group III-Arsenide-Nitride Quantum Well Structures on GaAs for Laser Diodes Emitting at 1.3 um

T. Jouhti, C.S. Peng, E.-M. Pavelescu, W. Li, V.-T. Rangel-Kuoppa, J. Konttinen, P. Laukkanen, M. Pessa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

2 Citations (Scopus)

Translated title of the contribution	Group III-Arsenide-Nitride Quantum Well Structures on GaAs for Laser Diodes Emitting at 1.3 um
Original language	English
Title of host publication	Novel In-Plane Semiconductor Lasers, 21-23 January 2002, San Jose, USA, Proceedings of SPIE
Editors	J.R. Meyer, C.G. Gmachl
Pages	32-41
Publication status	Published - 2002
Publication type	A4 Article in conference proceedings

Publication forum classification

@inproceedings{151ca4cec93c4c1da2aaea83ac00d7df,

title = "Group III-Arsenide-Nitride Quantum Well Structures on GaAs for Laser Diodes Emitting at 1.3 um",

author = "T. Jouhti and C.S. Peng and E.-M. Pavelescu and W. Li and V.-T. Rangel-Kuoppa and J. Konttinen and P. Laukkanen and M. Pessa",

note = "Contribution: organisation=orc,FACT1=1",

year = "2002",

language = "English",

pages = "32--41",

editor = "J.R. Meyer and C.G. Gmachl",

booktitle = "Novel In-Plane Semiconductor Lasers, 21-23 January 2002, San Jose, USA, Proceedings of SPIE",

}

Group III-Arsenide-Nitride Quantum Well Structures on GaAs for Laser Diodes Emitting at 1.3 um. / Jouhti, T.; Peng, C.S.; Pavelescu, E.-M. et al.
Novel In-Plane Semiconductor Lasers, 21-23 January 2002, San Jose, USA, Proceedings of SPIE. ed. / J.R. Meyer; C.G. Gmachl. 2002. p. 32-41.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Group III-Arsenide-Nitride Quantum Well Structures on GaAs for Laser Diodes Emitting at 1.3 um

AU - Jouhti, T.

AU - Peng, C.S.

AU - Pavelescu, E.-M.

AU - Li, W.

AU - Rangel-Kuoppa, V.-T.

AU - Konttinen, J.

AU - Laukkanen, P.

AU - Pessa, M.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2002

Y1 - 2002

M3 - Conference contribution

SP - 32

EP - 41

BT - Novel In-Plane Semiconductor Lasers, 21-23 January 2002, San Jose, USA, Proceedings of SPIE

A2 - Meyer, J.R.

A2 - Gmachl, C.G.

ER -