Growth of device-quality layer directly on (001) Ge substrates by both solid-source and gas-source MBE

W. Li, S. Laaksonen, J. Haapamaa, M. Pessa

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26 Citations (Scopus)

Translated title of the contribution	Growth of device-quality layer directly on (001) Ge substrates by both solid-source and gas-source MBE
Original language	English
Pages (from-to)	104-107
Number of pages	4
Journal	Journal of Crystal Growth
Volume	227-228
Publication status	Published - 2001
Publication type	A1 Journal article-refereed

Publication forum classification

@article{d760aff17f1c4589b32d8d43a62abbcf,

title = "Growth of device-quality layer directly on (001) Ge substrates by both solid-source and gas-source MBE",

author = "W. Li and S. Laaksonen and J. Haapamaa and M. Pessa",

note = "Contribution: organisation=orc,FACT1=1",

year = "2001",

language = "English",

volume = "227-228",

pages = "104--107",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Growth of device-quality layer directly on (001) Ge substrates by both solid-source and gas-source MBE

AU - Li, W.

AU - Laaksonen, S.

AU - Haapamaa, J.

AU - Pessa, M.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2001

Y1 - 2001

M3 - Article

SN - 0022-0248

VL - 227-228

SP - 104

EP - 107

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -