Growth of Ga(al.0,29)In(al.0,71)As(al.0,61)P(al.0,39) ( = 1,3 m) on InP by gas source molecular beam epitaxy, presented at the Seventh International Conference on Molecular beam Epitaxy

K. Tappura, H. Asonen

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific

    Translated title of the contributionGrowth of Ga(al.0,29)In(al.0,71)As(al.0,61)P(al.0,39) ( = 1,3 m) on InP by gas source molecular beam epitaxy, presented at the Seventh International Conference on Molecular beam Epitaxy
    Original languageEnglish
    Title of host publicationJournal of Crystal Growth
    Publication statusPublished - 1992
    Publication typeB3 Article in conference proceedings

    Publication forum classification

    • No publication forum level

    Cite this