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Growth of Ga(al.0,29)In(al.0,71)As(al.0,61)P(al.0,39) ( = 1,3 m) on InP by gas source molecular beam epitaxy, presented at the Seventh International Conference on Molecular beam Epitaxy

  • K. Tappura
  • , H. Asonen

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific

    Translated title of the contributionGrowth of Ga(al.0,29)In(al.0,71)As(al.0,61)P(al.0,39) ( = 1,3 m) on InP by gas source molecular beam epitaxy, presented at the Seventh International Conference on Molecular beam Epitaxy
    Original languageEnglish
    Title of host publicationJournal of Crystal Growth
    Publication statusPublished - 1992
    Publication typeB3 Article in conference proceedings

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