Translated title of the contribution | Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxy |
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Original language | English |
Pages (from-to) | 101-105 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 105 |
Publication status | Published - 1990 |
Publication type | A1 Journal article-refereed |
Publication forum classification
- No publication forum level