Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxy

A. Asonen, K. Rakennus, K. Tappura, M. Hovinen, M. Pessa

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    17 Citations (Scopus)
    Translated title of the contributionGrowth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxy
    Original languageEnglish
    Pages (from-to)101-105
    Number of pages5
    JournalJournal of Crystal Growth
    Volume105
    Publication statusPublished - 1990
    Publication typeA1 Journal article-refereed

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