Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxy

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Translated title of the contribution	Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxy
Original language	English
Pages (from-to)	101-105
Number of pages	5
Journal	Journal of Crystal Growth
Volume	105
Publication status	Published - 1990
Publication type	A1 Journal article-refereed

Publication forum classification

@article{031665eba4394b25b2f70807f40a3f31,

title = "Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxy",

author = "A. Asonen and K. Rakennus and K. Tappura and M. Hovinen and M. Pessa",

note = "Contribution: organisation=fys,FACT1=1",

year = "1990",

language = "English",

volume = "105",

pages = "101--105",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}