Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 um lasers

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Translated title of the contribution	Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 um lasers
Original language	English
Pages (from-to)	533-536
Journal	Journal of Crystal Growth
Volume	230
Publication status	Published - 2001
Publication type	A1 Journal article-refereed

Publication forum classification

@article{10871d74cde74153912ad1b5a434a704,

title = "Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 um lasers",

author = "W. Li and J. Turpeinen and P. Melanen and P. Savolainen and P. Uusimaa and M. Pessa",

note = "Contribution: organisation=orc,FACT1=1",

year = "2001",

language = "English",

volume = "230",

pages = "533--536",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 um lasers

AU - Li, W.

AU - Turpeinen, J.

AU - Melanen, P.

AU - Savolainen, P.

AU - Uusimaa, P.

AU - Pessa, M.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2001

Y1 - 2001

M3 - Article

SN - 0022-0248

VL - 230

SP - 533

EP - 536

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -