Growth phenomena and characteristics of strained In<inf>x</inf>Ga<inf>1-x</inf>As on GaAs

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@article{bb3abf90f4e74a1e94f42c83e498a26e,

title = "Growth phenomena and characteristics of strained InxGa1-xAs on GaAs",

author = "J. Pamulapati and P. Berger and K. Chang and J. Oh and Y. Chen and J. Singh and P. Bhattacharya and R. Gibala",

year = "1989",

doi = "10.1016/0022-0248(89)90380-1",

language = "Ei tiedossa",

volume = "95",

pages = "193--196",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Growth phenomena and characteristics of strained InxGa1-xAs on GaAs

AU - Pamulapati, J.

AU - Berger, P.

AU - Chang, K.

AU - Oh, J.

AU - Chen, Y.

AU - Singh, J.

AU - Bhattacharya, P.

AU - Gibala, R.

PY - 1989

Y1 - 1989

U2 - 10.1016/0022-0248(89)90380-1

DO - 10.1016/0022-0248(89)90380-1

M3 - Artikkeli

SN - 0022-0248

VL - 95

SP - 193

EP - 196

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -