GSMBE growth of GaInAsP on GaAs substrates and its application to 0.98 myym lasers

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Translated title of the contribution	GSMBE growth of GaInAsP on GaAs substrates and its application to 0.98 myym lasers
Original language	English
Pages (from-to)	1033-1036
Journal	Journal of Crystal Growth
Volume	127
Publication status	Published - 1993
Publication type	A1 Journal article-refereed

Publication forum classification

@article{348a06dd1e944e0fac1397d4f01d6250,

title = "GSMBE growth of GaInAsP on GaAs substrates and its application to 0.98 myym lasers",

author = "G. Zhang and A. Ovtchinnikov and J. N{\"a}ppi and T. Hakkarainen and H. Asonen",

note = "Contribution: organisation=fys,FACT1=1",

year = "1993",

language = "English",

volume = "127",

pages = "1033--1036",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - GSMBE growth of GaInAsP on GaAs substrates and its application to 0.98 myym lasers

AU - Zhang, G.

AU - Ovtchinnikov, A.

AU - Näppi, J.

AU - Hakkarainen, T.

AU - Asonen, H.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1993

Y1 - 1993

M3 - Article

SN - 0022-0248

VL - 127

SP - 1033

EP - 1036

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -