>8W GaInNAs VECSEL emitting at 615 nm

Tomi Leinonen; Jussi Pekka Penttinen; Ville Markus Korpijärvi; Emmi Kantola; Mircea Guina

doi:10.1117/12.2079162

>8W GaInNAs VECSEL emitting at 615 nm

Tomi Leinonen
, Jussi Pekka Penttinen
, Ville Markus Korpijärvi
, Emmi Kantola
, Mircea Guina

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

1 Citation (Scopus)

Abstract

We report a high-power VECSEL emitting <8W around 615 nm. The gain chip of the laser was grown by plasmaassisted molecular beam epitaxy and it comprised 10 GaInNAs quantum wells. The VECSEL cavity had a V-shaped geometry and a 10-mm-long non-critically phase-matched LBO crystal for second harmonic generation. The cavity incorporated also an etalon and a birefringent filter for controlling the output wavelength. With the aid of the secondharmonic output and the infrared light leaking out from the laser cavity, the single-pass conversion efficiency of the crystal was estimated to have a value of 0.75%.

Original language	English
Title of host publication	Proceedings of SPIE
Subtitle of host publication	Vertical External Cavity Surface Emitting Lasers (VECSELs) V
Publisher	SPIE
Volume	9349
ISBN (Print)	9781628414394
DOIs	https://doi.org/10.1117/12.2079162
Publication status	Published - 2015
Publication type	A4 Article in conference proceedings
Event	Vertical External Cavity Surface Emitting Lasers - , United Kingdom Duration: 1 Jan 2015 → …

Conference

Conference	Vertical External Cavity Surface Emitting Lasers
Country/Territory	United Kingdom
Period	1/01/15 → …

Keywords

frequency doubling
high power visible laser
OPSL
orange-red VECSEL
SDL
SHG

Publication forum classification

Publication forum level 0

ASJC Scopus subject areas

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@inproceedings{91e86862bdb64b55bb742d610b567dea,

title = ">8W GaInNAs VECSEL emitting at 615 nm",

abstract = "We report a high-power VECSEL emitting <8W around 615 nm. The gain chip of the laser was grown by plasmaassisted molecular beam epitaxy and it comprised 10 GaInNAs quantum wells. The VECSEL cavity had a V-shaped geometry and a 10-mm-long non-critically phase-matched LBO crystal for second harmonic generation. The cavity incorporated also an etalon and a birefringent filter for controlling the output wavelength. With the aid of the secondharmonic output and the infrared light leaking out from the laser cavity, the single-pass conversion efficiency of the crystal was estimated to have a value of 0.75\%.",

keywords = "frequency doubling, high power visible laser, OPSL, orange-red VECSEL, SDL, SHG",

author = "Tomi Leinonen and Penttinen, \{Jussi Pekka\} and Korpij{\"a}rvi, \{Ville Markus\} and Emmi Kantola and Mircea Guina",

year = "2015",

doi = "10.1117/12.2079162",

language = "English",

isbn = "9781628414394",

volume = "9349",

booktitle = "Proceedings of SPIE",

publisher = "SPIE",

address = "United States",

note = "Vertical External Cavity Surface Emitting Lasers ; Conference date: 01-01-2015",

}

TY - GEN

T1 - >8W GaInNAs VECSEL emitting at 615 nm

AU - Leinonen, Tomi

AU - Penttinen, Jussi Pekka

AU - Korpijärvi, Ville Markus

AU - Kantola, Emmi

AU - Guina, Mircea

PY - 2015

Y1 - 2015

N2 - We report a high-power VECSEL emitting <8W around 615 nm. The gain chip of the laser was grown by plasmaassisted molecular beam epitaxy and it comprised 10 GaInNAs quantum wells. The VECSEL cavity had a V-shaped geometry and a 10-mm-long non-critically phase-matched LBO crystal for second harmonic generation. The cavity incorporated also an etalon and a birefringent filter for controlling the output wavelength. With the aid of the secondharmonic output and the infrared light leaking out from the laser cavity, the single-pass conversion efficiency of the crystal was estimated to have a value of 0.75%.

AB - We report a high-power VECSEL emitting <8W around 615 nm. The gain chip of the laser was grown by plasmaassisted molecular beam epitaxy and it comprised 10 GaInNAs quantum wells. The VECSEL cavity had a V-shaped geometry and a 10-mm-long non-critically phase-matched LBO crystal for second harmonic generation. The cavity incorporated also an etalon and a birefringent filter for controlling the output wavelength. With the aid of the secondharmonic output and the infrared light leaking out from the laser cavity, the single-pass conversion efficiency of the crystal was estimated to have a value of 0.75%.

KW - frequency doubling

KW - high power visible laser

KW - OPSL

KW - orange-red VECSEL

KW - SDL

KW - SHG

U2 - 10.1117/12.2079162

DO - 10.1117/12.2079162

M3 - Conference contribution

AN - SCOPUS:84925597620

SN - 9781628414394

VL - 9349

BT - Proceedings of SPIE

PB - SPIE

T2 - Vertical External Cavity Surface Emitting Lasers

Y2 - 1 January 2015

ER -

>8W GaInNAs VECSEL emitting at 615 nm

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