High-efﬁciency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique

Antti Tukiainen; Arto Aho; Gabriele Gori; Ville Polojärvi; Mariacristina Casale; Erminio Greco; Riku Isoaho; Timo Aho; Marianna Raappana; Roberta Campesato; Mircea Guina

doi:10.1002/pip.2784

High-efﬁciency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique

Antti Tukiainen, Arto Aho, Gabriele Gori, Ville Polojärvi, Mariacristina Casale, Erminio Greco, Riku Isoaho, Timo Aho, Marianna Raappana, Roberta Campesato, Mircea Guina

Research output: Contribution to journal › Article › Scientific › peer-review

27 Citations (Scopus)

Abstract

Triple-junction GaInP/GaAs/GaInNAs solar cells with conversion efﬁciency of ~29% at AM0 are demonstrated using a combination of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The bottom junction made of GaInNAs was ﬁrst grown on a GaAs substrate by MBE and then transferred to an MOCVD system for subsequent overgrowth of the two top junctions. The process produced repeatable cell characteristics and uniform efﬁciency pattern over 4-inch wafers. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efﬁciency tandem solar cells with three or more junctions.

Original language	English
Article number	PIP2784
Pages (from-to)	914-919
Number of pages	6
Journal	Progress in Photovoltaics: Research and Applications
Volume	24
Issue number	7
DOIs	https://doi.org/10.1002/pip.2784
Publication status	Published - 17 Jun 2016
Publication type	A1 Journal article-refereed

Keywords

multijunction solar cells
molecular beam epitaxy
metal-organic chemical vapor deposition
dilute nitride semiconductors

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Publication forum level 2

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10.1002/pip.2784

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title = "High-efﬁciency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique",

abstract = "Triple-junction GaInP/GaAs/GaInNAs solar cells with conversion efﬁciency of ~29% at AM0 are demonstrated using a combination of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The bottom junction made of GaInNAs was ﬁrst grown on a GaAs substrate by MBE and then transferred to an MOCVD system for subsequent overgrowth of the two top junctions. The process produced repeatable cell characteristics and uniform efﬁciency pattern over 4-inch wafers. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efﬁciency tandem solar cells with three or more junctions.",

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T1 - High-efﬁciency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique

AU - Tukiainen, Antti

AU - Aho, Arto

AU - Gori, Gabriele

AU - Polojärvi, Ville

AU - Casale, Mariacristina

AU - Greco, Erminio

AU - Isoaho, Riku

AU - Aho, Timo

AU - Raappana, Marianna

AU - Campesato, Roberta

AU - Guina, Mircea

N1 - INT=orc,"Isoaho, Riku"

PY - 2016/6/17

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N2 - Triple-junction GaInP/GaAs/GaInNAs solar cells with conversion efﬁciency of ~29% at AM0 are demonstrated using a combination of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The bottom junction made of GaInNAs was ﬁrst grown on a GaAs substrate by MBE and then transferred to an MOCVD system for subsequent overgrowth of the two top junctions. The process produced repeatable cell characteristics and uniform efﬁciency pattern over 4-inch wafers. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efﬁciency tandem solar cells with three or more junctions.

AB - Triple-junction GaInP/GaAs/GaInNAs solar cells with conversion efﬁciency of ~29% at AM0 are demonstrated using a combination of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The bottom junction made of GaInNAs was ﬁrst grown on a GaAs substrate by MBE and then transferred to an MOCVD system for subsequent overgrowth of the two top junctions. The process produced repeatable cell characteristics and uniform efﬁciency pattern over 4-inch wafers. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efﬁciency tandem solar cells with three or more junctions.

KW - multijunction solar cells

KW - molecular beam epitaxy

KW - metal-organic chemical vapor deposition

KW - dilute nitride semiconductors

U2 - 10.1002/pip.2784

DO - 10.1002/pip.2784

M3 - Article

SN - 1062-7995

VL - 24

SP - 914

EP - 919

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

IS - 7

M1 - PIP2784

ER -

High-efﬁciency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique

Abstract

Keywords

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