High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique

Antti Tukiainen, Arto Aho, Gabriele Gori, Ville Polojärvi, Mariacristina Casale, Erminio Greco, Riku Isoaho, Timo Aho, Marianna Raappana, Roberta Campesato, Mircea Guina

    Research output: Contribution to journalArticleScientificpeer-review

    27 Citations (Scopus)


    Triple-junction GaInP/GaAs/GaInNAs solar cells with conversion efficiency of ~29% at AM0 are demonstrated using a combination of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The bottom junction made of GaInNAs was first grown on a GaAs substrate by MBE and then transferred to an MOCVD system for subsequent overgrowth of the two top junctions. The process produced repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency tandem solar cells with three or more junctions.
    Original languageEnglish
    Article numberPIP2784
    Pages (from-to)914-919
    Number of pages6
    JournalProgress in Photovoltaics: Research and Applications
    Issue number7
    Publication statusPublished - 17 Jun 2016
    Publication typeA1 Journal article-refereed


    • multijunction solar cells
    • molecular beam epitaxy
    • metal-organic chemical vapor deposition
    • dilute nitride semiconductors

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    • Publication forum level 2


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