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Abstract
A lattice-matched four-junction solar cell on a GaAs substrate, for space applications, is demonstrated. The solar cell incorporates MBE grown GaInP, GaAs, GaInNAsSb and GaInNAsSb junctions with band-gaps of 1.9 eV, 1.4 eV, 1.2 eV and 0.9 eV, respectively. For AM0 illumination, the cell exhibited a maximum efficiency of 27%. For this performance, a high collection efficiency for the bottom cell is required. The high efficiency and current generation for the four-junction solar cell is primarily enabled by achieving a very low background doping level (~5×1014 cm-3) and high charge carrier lifetimes (2-4 ns) for the GaInNAsSb bottom junction. Achieving an efficiency of 33% is deemed possible by further reduction of reflection, shadowing and transmission losses.
Original language | English |
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Title of host publication | 2019 European Space Power Conference (ESPC) |
Publisher | IEEE |
ISBN (Electronic) | 978-1-7281-2126-0 |
ISBN (Print) | 978-1-7281-2127-7 |
DOIs | |
Publication status | Published - Oct 2019 |
Publication type | A4 Article in conference proceedings |
Event | European Space Power Conference - Duration: 1 Jan 2000 → … |
Conference
Conference | European Space Power Conference |
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Period | 1/01/00 → … |
Publication forum classification
- Publication forum level 1
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Dive into the research topics of 'High Efficiency Lattice-Matched 4J Space Solar Cells on GaAs'. Together they form a unique fingerprint.Activities
- 1 Conference presentation
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High Efficiency Lattice-Matched 4J Space Solar Cells on GaAs
Aho, A. (Speaker), Raappana, M. (Contributor), Isoaho, R. (Contributor), Aho, T. (Contributor), Polojärvi, V. (Contributor), Tukiainen, A. (Contributor), Anttola, E. (Contributor), Mäkelä, S. (Contributor), Reuna, J. V. T. (Contributor), Arttu, H. (Contributor) & Guina, M. (Contributor)
2019Activity: Talk or presentation › Conference presentation