Abstract
We report on the complete experimental evaluation of a GaInNAs/GaAs (dilute nitride) semiconductor optical amplifier that operates at 1.3 μm and exhibits 28 dB gain and a gain recovery time of 100 ps. Successful wavelength conversion operation is demonstrated using pseudorandom bit sequence 2<sup>7</sup> - 1 non-return-to-zero bit streams at 5 and 10 Gb/s, yielding error-free performance and showing feasibility for implementation in various signal processing functionalities. The operational credentials of the device are analyzed in various operational regimes, while its nonlinear performance is examined in terms of four-wave mixing. Moreover, characterization results reveal enhanced temperature stability with almost no gain variation around the 1320 nm region for a temperature range from 20°C to 50°C. The operational characteristics of the device, along with the cost and energy benefits of dilute nitride technology, make it very attractive for application in optical access networks and dense photonic integrated circuits.
| Translated title of the contribution | High-gain 1.3. µm GaInNAs semiconductor optical amplifier with enhanced temperature stability for all-optical signal processing at 10 Gb/s |
|---|---|
| Original language | English |
| Pages (from-to) | 46-52 |
| Number of pages | 7 |
| Journal | Applied Optics |
| Volume | 54 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2015 |
| Publication type | A1 Journal article-refereed |
Publication forum classification
- Publication forum level 1
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics