High-gain new InGaAsN heterostructure

C.S. Peng; J. Konttinen; T. Jouhti; M. Pessa

High-gain new InGaAsN heterostructure

C.S. Peng
, J. Konttinen
, T. Jouhti
, M. Pessa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

1 Citation (Scopus)

Translated title of the contribution	High-gain new InGaAsN heterostructure
Original language	English
Title of host publication	Semiconductors lasers and laser dynamics II, 3-6 April 2006, Strasbourg, France. Proceedings of SPIE
Editors	D. Lenstra, M. Pessa, I.H. White
Pages	pp. 618409-1-618409-6
Publication status	Published - 2006
Publication type	A4 Article in conference proceedings

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Cite this

@inproceedings{90168ef367904b8aa40fb3a117f72d69,

title = "High-gain new InGaAsN heterostructure",

author = "C.S. Peng and J. Konttinen and T. Jouhti and M. Pessa",

note = "ISBN 0-8194-6240-3<br/>Contribution: organisation=orc,FACT1=1",

year = "2006",

language = "English",

pages = "pp. 618409--1--618409--6",

editor = "D. Lenstra and M. Pessa and I.H. White",

booktitle = "Semiconductors lasers and laser dynamics II, 3-6 April 2006, Strasbourg, France. Proceedings of SPIE",

}

High-gain new InGaAsN heterostructure. / Peng, C.S.; Konttinen, J.; Jouhti, T. et al.
Semiconductors lasers and laser dynamics II, 3-6 April 2006, Strasbourg, France. Proceedings of SPIE. ed. / D. Lenstra; M. Pessa; I.H. White. 2006. p. pp. 618409-1-618409-6.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

TY - GEN

T1 - High-gain new InGaAsN heterostructure

AU - Peng, C.S.

AU - Konttinen, J.

AU - Jouhti, T.

AU - Pessa, M.

N1 - ISBN 0-8194-6240-3<br/>Contribution: organisation=orc,FACT1=1

PY - 2006

Y1 - 2006

M3 - Conference contribution

SP - pp. 618409-1-618409-6

BT - Semiconductors lasers and laser dynamics II, 3-6 April 2006, Strasbourg, France. Proceedings of SPIE

A2 - Lenstra, D.

A2 - Pessa, M.

A2 - White, I.H.

ER -