High performance 980 nm strained-layer GaInAs/GaInAsP/GaInP quantum well lasers grown by all solid source molecular beam epitaxy

P. Savolainen, M. Toivonen, H. Asonen, M. Pessa, R. Murison

    Research output: Contribution to journalArticleScientificpeer-review

    21 Citations (Scopus)
    Translated title of the contributionHigh performance 980 nm strained-layer GaInAs/GaInAsP/GaInP quantum well lasers grown by all solid source molecular beam epitaxy
    Original languageEnglish
    Pages (from-to)986-988
    JournalIEEE Photonics Technology Letters
    Volume8
    Issue number8
    Publication statusPublished - 1996
    Publication typeA1 Journal article-refereed

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