High-performance GaInP/AlGaInP strained quantum well lasers grown by solid source molecular beam epitaxy

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9 Citations (Scopus)

Translated title of the contribution	High-performance GaInP/AlGaInP strained quantum well lasers grown by solid source molecular beam epitaxy
Original language	English
Pages (from-to)	1923-1926
Journal	Semiconductor Science and Technology
Volume	11
Publication status	Published - 1996
Publication type	A1 Journal article-refereed

Publication forum classification

@article{33f0d04710154991b1c344db6ebc228b,

title = "High-performance GaInP/AlGaInP strained quantum well lasers grown by solid source molecular beam epitaxy",

author = "M. Toivonen and P. Savolainen and M. Pessa",

note = "Contribution: organisation=fys,FACT1=1",

year = "1996",

language = "English",

volume = "11",

pages = "1923--1926",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

}

TY - JOUR

T1 - High-performance GaInP/AlGaInP strained quantum well lasers grown by solid source molecular beam epitaxy

AU - Toivonen, M.

AU - Savolainen, P.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1996

Y1 - 1996

M3 - Article

SN - 0268-1242

VL - 11

SP - 1923

EP - 1926

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

ER -