High-power disk lasers based on dilute nitride heterostructures

M. Guina, T. Leinonen, A. Härkönen, M. Pessa

    Research output: Contribution to journalReview Articlepeer-review

    27 Citations (Scopus)
    68 Downloads (Pure)

    Abstract

    We report the development of InGaAsN-based gain mirrors for high-power optically pumped semiconductor disk lasers with direct emission at wavelengths around 1180 nm. The gain mirrors were fabricated by molecular beam epitaxy. They consist of 10 dilute nitride quantum wells, which were placed within a GaAs micro-cavity on top of a GaAs/AlAs distributed Bragg reflector. We demonstrated laser operation at ~1180 nm with record high output power (~7 W). The differential efficiency was ~30% for operation at 5 °C and ~28% when operating at 15 °C. The lasers exhibited excellent tuning characteristics, delivering an output power of more than 5 W in a narrow spectrum and providing over 30 nm tuning band. These features represent significant progress towards demonstration of practical high-power lasers with frequency-doubled yellow emission required for laser guide stars, life sciences and spectroscopy. At the same time the results emphasize the importance of dilute nitride heterostructures in the development of novel optoelectronic devices.
    Translated title of the contributionHigh-power disk lasers based on dilute nitride heterostructures
    Original languageEnglish
    Pages (from-to)13 p
    JournalNew Journal of Physics
    Volume11
    Issue number125019
    DOIs
    Publication statusPublished - 2009
    Publication typeA2 Review article in a scientific journal

    Publication forum classification

    • Publication forum level 2

    Fingerprint

    Dive into the research topics of 'High-power disk lasers based on dilute nitride heterostructures'. Together they form a unique fingerprint.

    Cite this