High power GaInNAs VECSEL emitting at 1230/615 nm

Jussi-Pekka Penttinen, Tomi Leinonen, Ville-Markus Korpijärvi, Emmi Kantola, Mircea Guina

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Abstract

    We report a frequency-doubled VECSEL operating at 1230/615 nm. The gain chip was grown by plasma-assisted MBE and comprised 10 GaInNAs quantum wells. Preliminary experiments show an output power of >8 W at 615 nm.
    Original languageEnglish
    Title of host publicationThe European Conference on Lasers and Electro-Optics 2015
    PublisherOSA
    ISBN (Print)978-1-4673-7475-0
    Publication statusPublished - 22 Jun 2015
    Publication typeA4 Article in conference proceedings
    EventEuropean Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference -
    Duration: 1 Jan 1900 → …

    Conference

    ConferenceEuropean Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference
    Abbreviated titleCLEO/Europe-EQEC
    Period1/01/00 → …

    Publication forum classification

    • Publication forum level 0

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