High-power temperature-stable GaInNAs distributed Bragg reflector laser emitting at 1180 nm

Ville-Markus Korpijärvi, Jukka Viheriälä, Mervi Koskinen, Antti T. Aho, Mircea Guina

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    12 Citations (Scopus)


    We report a single-mode 1180 nm distributed Bragg reflector (DBR) laser diode with a high output power of 340 mW. For the fabrication, we employed novel nanoimprint lithography that ensures cost-effective, large-area, conformal patterning and does not require regrowth. The output characteristics exhibited outstanding temperature insensitivity with a power drop of only 30% for an increase of the mount temperature from 20°C to 80°C. The high temperature stability was achieved by using GaInNAs/GaAs quantum wells (QWs), which exhibit improved carrier confinement compared to standard InGaAs/GaAs QWs. The corresponding characteristic temperatures were T0 = 110 K and T1 = 160 K. Moreover, we used a large detuning between the peak wavelength of the material gain at room temperature and the lasing wavelength determined by the DBR. In addition to good temperature characteristics, GaInNAs/GaAs QWs exhibit relatively low lattice strain with direct impact on improving the lifetime of laser diodes at this challenging wavelength range. The single-mode laser emission could be tuned by changing the mount temperature (0.1 nm/°C) or the drive current (0.5 pm/mA). The laser showed no degradation in a room-temperature lifetime test at 900 mA drive current. These compact and efficient 1180 nm laser diodes are instrumental for the development of compact frequency-doubled yellow - orange lasers, which have important applications in medicine and spectroscopy.

    Original languageEnglish
    Pages (from-to)657-660
    Number of pages4
    JournalOptics Letters
    Issue number4
    Publication statusPublished - 15 Feb 2016
    Publication typeA1 Journal article-refereed

    Publication forum classification

    • Publication forum level 2

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics


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