High responsivity near-infrared photodetectors in evaporated Ge-on-Si

V. Sorianello, A. De Iacovo, L. Colace, A. Fabbri, L. Tortora, E. Buffagni, G. Assanto

    Research output: Contribution to journalArticleScientificpeer-review

    30 Citations (Scopus)


    Germanium is considered the most suitable semiconductor for monolithic integration of near-infrared detectors on silicon photonic chips. Here we report on Ge-on-Si near-infrared photodetectors fabricated by thermal evaporation, demonstrating the use of phosphorus spin-on-dopant to compensate the acceptor states introduced by dislocations. The detectors exhibit 1.55 μm responsivities as high as 0.1 A/W, more than two orders of magnitude larger than in undoped devices and comparing well with state-of-the-art p-i-n photodiodes. This approach enables simple and low-cost monolithic integration of near-infrared sensors with silicon photonics.

    Original languageEnglish
    Article number081101
    JournalApplied Physics Letters
    Issue number8
    Publication statusPublished - 20 Aug 2012
    Publication typeA1 Journal article-refereed

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)


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