High sensitivity Si-based backward diodes for zero-biased square-law detection and the effect of post-growth annealing on performance

Niu Jin, Ronghua Yu, Sung Yong Chung, Paul R. Berger, Phillip E. Thompson, Patrick Fay

Research output: Contribution to journalArticleScientificpeer-review

13 Citations (Scopus)

Abstract

High-sensitivity Si-based backward diodes were realized that are monolithically integratable with transistor circuitry. Potential applications include large area focal plane arrays. The Si-based backward diodes exhibit a high zero-biased curvature coefficient, γ, of 31 V-1 and a low zero biased junction capacitance, Cj, of 9 fF/μm2, all at room temperature. The predicted low frequency voltage sensitivity, βv, for a 50 Ω source is 3100 V/W. The high sensitivity, low junction capacitance, and Si/SiGe heterojunction bipolar transistor compatibility of the Si-based backward diodes make them very attractive for zero-bias square-law detector applications.

Original languageEnglish
Pages (from-to)575-578
Number of pages4
JournalIEEE Electron Device Letters
Volume26
Issue number8
DOIs
Publication statusPublished - 2005
Externally publishedYes
Publication typeA1 Journal article-refereed

Keywords

  • Backward diodes
  • Millimeter-wave detectors
  • Si/SiGe heterojunction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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