TY - JOUR
T1 - High sensitivity Si-based backward diodes for zero-biased square-law detection and the effect of post-growth annealing on performance
AU - Jin, Niu
AU - Yu, Ronghua
AU - Chung, Sung Yong
AU - Berger, Paul R.
AU - Thompson, Phillip E.
AU - Fay, Patrick
N1 - Funding Information:
Manuscript received February 11, 2005; revised May 25, 2005. This work was supported by the National Science Foundation under Grants DMR-0103248, DMR–0216892, and ECS-0323657. The work at the National Research Laboratory (NRL) was supported by the Office of Naval Research. The review of this letter was arranged by Editor E. Sangiorgi.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2005
Y1 - 2005
N2 - High-sensitivity Si-based backward diodes were realized that are monolithically integratable with transistor circuitry. Potential applications include large area focal plane arrays. The Si-based backward diodes exhibit a high zero-biased curvature coefficient, γ, of 31 V-1 and a low zero biased junction capacitance, Cj, of 9 fF/μm2, all at room temperature. The predicted low frequency voltage sensitivity, βv, for a 50 Ω source is 3100 V/W. The high sensitivity, low junction capacitance, and Si/SiGe heterojunction bipolar transistor compatibility of the Si-based backward diodes make them very attractive for zero-bias square-law detector applications.
AB - High-sensitivity Si-based backward diodes were realized that are monolithically integratable with transistor circuitry. Potential applications include large area focal plane arrays. The Si-based backward diodes exhibit a high zero-biased curvature coefficient, γ, of 31 V-1 and a low zero biased junction capacitance, Cj, of 9 fF/μm2, all at room temperature. The predicted low frequency voltage sensitivity, βv, for a 50 Ω source is 3100 V/W. The high sensitivity, low junction capacitance, and Si/SiGe heterojunction bipolar transistor compatibility of the Si-based backward diodes make them very attractive for zero-bias square-law detector applications.
KW - Backward diodes
KW - Millimeter-wave detectors
KW - Si/SiGe heterojunction
U2 - 10.1109/LED.2005.852738
DO - 10.1109/LED.2005.852738
M3 - Article
AN - SCOPUS:23844456543
SN - 0741-3106
VL - 26
SP - 575
EP - 578
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 8
ER -