Highly Selective Etch Stop Layer for GaSb Substrate Removal

Jukka Lindfors; Jonna Paajaste; Riku Koskinen; Antti Härkönen; Soile Suomalainen; Mircea Guina

Highly Selective Etch Stop Layer for GaSb Substrate Removal

Jukka Lindfors
, Jonna Paajaste
, Riku Koskinen
, Antti Härkönen
, Soile Suomalainen
, Mircea Guina

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

Translated title of the contribution	Highly Selective Etch Stop Layer for GaSb Substrate Removal
Original language	English
Title of host publication	16th Semiconducting and Insulating Materials Conference (SIMC-XVI) June 16 - 23, 2011, Stockholm, Sweden
Place of Publication	Stockholm
Publisher	Royal Institute of Technology
Pages	1-1
Number of pages	1
Publication status	Published - 2011
Publication type	A4 Article in conference proceedings

Publication series

Name	Semiconducting and Insulating Materials Conference SIMC
Publisher	Royal Institute of Technology

Publication forum classification

No publication forum level

Cite this

@inproceedings{1fe0c551e97d4a30b836acbaef6c7aea,

title = "Highly Selective Etch Stop Layer for GaSb Substrate Removal",

author = "Jukka Lindfors and Jonna Paajaste and Riku Koskinen and Antti H{\"a}rk{\"o}nen and Soile Suomalainen and Mircea Guina",

note = "Poster Tu3-1.Ei ut-numeroa 5.4.2014<br/>Contribution: organisation=orc,FACT1=1",

year = "2011",

language = "English",

series = "Semiconducting and Insulating Materials Conference SIMC",

publisher = "Royal Institute of Technology",

pages = "1--1",

booktitle = "16th Semiconducting and Insulating Materials Conference (SIMC-XVI) June 16 - 23, 2011, Stockholm, Sweden",

}

Highly Selective Etch Stop Layer for GaSb Substrate Removal. / Lindfors, Jukka; Paajaste, Jonna; Koskinen, Riku et al.
16th Semiconducting and Insulating Materials Conference (SIMC-XVI) June 16 - 23, 2011, Stockholm, Sweden. Stockholm: Royal Institute of Technology, 2011. p. 1-1 (Semiconducting and Insulating Materials Conference SIMC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Highly Selective Etch Stop Layer for GaSb Substrate Removal

AU - Lindfors, Jukka

AU - Paajaste, Jonna

AU - Koskinen, Riku

AU - Härkönen, Antti

AU - Suomalainen, Soile

AU - Guina, Mircea

N1 - Poster Tu3-1.Ei ut-numeroa 5.4.2014<br/>Contribution: organisation=orc,FACT1=1

PY - 2011

Y1 - 2011

M3 - Conference contribution

T3 - Semiconducting and Insulating Materials Conference SIMC

SP - 1

EP - 1

BT - 16th Semiconducting and Insulating Materials Conference (SIMC-XVI) June 16 - 23, 2011, Stockholm, Sweden

PB - Royal Institute of Technology

CY - Stockholm

ER -