Hybrid integrated GaSb/Si3N4 narrow linewidth (<50 kHz) distributed Bragg reflector laser

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Abstract

A narrow linewidth hybrid integrated distributed Bragg reflector (DBR) laser platform operating at 2 μm wavelength region is demonstrated. The laser architecture comprises AlGaInAsSb/GaSb type-I quantum well reflective semiconductor optical amplifiers butt-coupled to a Si3N4 photonic integrated circuit (PIC), incorporating a narrow-band DBR. The DBR is realized with a long spiral-shaped waveguide structure with periodic circular posts placed adjacent to the waveguide. At room temperature operating conditions, the laser exhibits a maximum continuous wave output power of more than 17 mW for emission near 2 μm. Linewidth properties are analyzed with a heterodyne measurement technique, involving the mixing of the laser signal with a frequency comb phase-locked to an ultra-stable laser. The hybrid laser exhibits a narrow linewidth of ∼8 kHz in 1 ms timescale and ∼50 kHz in 10 ms timescale.

Original languageEnglish
Article number091106
JournalApplied Physics Letters
Volume125
Issue number9
DOIs
Publication statusPublished - 26 Aug 2024
Publication typeA1 Journal article-refereed

Publication forum classification

  • Publication forum level 3

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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