Improved vertically stacked Si/SiGe resonant interband tunnel diode pair with small peak voltage shift and unequal peak currents

N. Jin, S. Y. Chung, R. Yu, P. R. Berger, P. E. Thompson

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)


A vertically integrated and serially connected npnp Si-based resonant interband tunnelling diode (RITD) pair is realised with low temperature molecular beam epitaxy (MBE) by monolithically stacking two RITDs with different spacer thicknesses. The asymmetric design manifests as unequal peak current densities that provide for much larger and uniform separation of the holding states for multi-valued logic. A δ-doped backwards diode connects the two serially connected RITDs with a very small series resistance. The I-V characteristic of the improved vertically integrated RITDs demonstrates two negative differential resistance (NDR) regions in the forward biasing condition with a small peak shift and unequal peak currents.

Original languageEnglish
Pages (from-to)1548-1550
Number of pages3
JournalElectronics Letters
Issue number24
Publication statusPublished - 25 Nov 2004
Externally publishedYes
Publication typeA1 Journal article-refereed

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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