Improving the current output of GaInNAs solar cells using distributed Bragg reflectors

Antti Tukiainen; Arto Aho; Ville Polojärvi; Mircea Guina

doi:10.1109/PVSC.2016.7749613

Improving the current output of GaInNAs solar cells using distributed Bragg reflectors

Antti Tukiainen
, Arto Aho
, Ville Polojärvi
, Mircea Guina

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

3 Citations (Scopus)

124 Downloads (Pure)

Abstract

The influence of AlGaAs-based distributed Bragg reflector (DBR) on the performance of a GaInNAs n-i-p solar cells is reported. The DBR increased the short circuit current density by ~1 mA/cm2, owing to increased external quantum efficiency in the wavelength range from 1120 nm to 1240 nm. As a result of the incorporation of the DBR structure, the series resistance of the cell was increased by 4 mOhm-cm2.

Original language	English
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
Publisher	IEEE
Pages	0368-0371
Number of pages	4
ISBN (Electronic)	978-1-5090-2724-8
DOIs	https://doi.org/10.1109/PVSC.2016.7749613
Publication status	Published - 21 Nov 2016
Publication type	A4 Article in conference proceedings
Event	IEEE Photovoltaic Specialists Conference - , United Kingdom Duration: 1 Jan 2000 → …

Publication series

Name
ISSN (Print)	0160-8371

Conference

Conference	IEEE Photovoltaic Specialists Conference
Country/Territory	United Kingdom
Period	1/01/00 → …

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Distributed Bragg reflectors
Junctions
Photovoltaic cells
Photovoltaic systems
Resistance

Publication forum classification

Publication forum level 1

Access to Document

10.1109/PVSC.2016.7749613

IEEE-PVSC 2016_Tukiainen_paper_final
© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Accepted author manuscript, 663 KB

http://urn.fi/URN:NBN:fi:tty-201612294925

Cite this

@inproceedings{5f66299b4067489abe696d44023c9bf0,

title = "Improving the current output of GaInNAs solar cells using distributed Bragg reflectors",

abstract = "The influence of AlGaAs-based distributed Bragg reflector (DBR) on the performance of a GaInNAs n-i-p solar cells is reported. The DBR increased the short circuit current density by \textasciitilde{}1 mA/cm2, owing to increased external quantum efficiency in the wavelength range from 1120 nm to 1240 nm. As a result of the incorporation of the DBR structure, the series resistance of the cell was increased by 4 mOhm-cm2.",

keywords = "Distributed Bragg reflectors, Junctions, Photovoltaic cells, Photovoltaic systems, Resistance",

author = "Antti Tukiainen and Arto Aho and Ville Poloj{\"a}rvi and Mircea Guina",

year = "2016",

month = nov,

day = "21",

doi = "10.1109/PVSC.2016.7749613",

language = "English",

publisher = "IEEE",

pages = "0368--0371",

booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)",

address = "United States",

note = "IEEE Photovoltaic Specialists Conference ; Conference date: 01-01-2000",

}

TY - GEN

T1 - Improving the current output of GaInNAs solar cells using distributed Bragg reflectors

AU - Tukiainen, Antti

AU - Aho, Arto

AU - Polojärvi, Ville

AU - Guina, Mircea

PY - 2016/11/21

Y1 - 2016/11/21

N2 - The influence of AlGaAs-based distributed Bragg reflector (DBR) on the performance of a GaInNAs n-i-p solar cells is reported. The DBR increased the short circuit current density by ~1 mA/cm2, owing to increased external quantum efficiency in the wavelength range from 1120 nm to 1240 nm. As a result of the incorporation of the DBR structure, the series resistance of the cell was increased by 4 mOhm-cm2.

AB - The influence of AlGaAs-based distributed Bragg reflector (DBR) on the performance of a GaInNAs n-i-p solar cells is reported. The DBR increased the short circuit current density by ~1 mA/cm2, owing to increased external quantum efficiency in the wavelength range from 1120 nm to 1240 nm. As a result of the incorporation of the DBR structure, the series resistance of the cell was increased by 4 mOhm-cm2.

KW - Distributed Bragg reflectors

KW - Junctions

KW - Photovoltaic cells

KW - Photovoltaic systems

KW - Resistance

U2 - 10.1109/PVSC.2016.7749613

DO - 10.1109/PVSC.2016.7749613

M3 - Conference contribution

SP - 368

EP - 371

BT - 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)

PB - IEEE

T2 - IEEE Photovoltaic Specialists Conference

Y2 - 1 January 2000

ER -

Improving the current output of GaInNAs solar cells using distributed Bragg reflectors

Abstract

Publication series

Conference

UN SDGs

Keywords

Publication forum classification

Access to Document

Fingerprint

Cite this