In0.53Ga0.47As metal‐semiconductor‐metal photodiodes with transparent cadmium tin oxide Schottky contacts

W. Gao; A-S. Khan; P. R. Berger; R. G. Hunsperger; G. Zydzik; H. M. O'Bryan; D. Sivco; A. Y. Cho

doi:10.1063/1.112820

In0.53Ga0.47As metal‐semiconductor‐metal photodiodes with transparent cadmium tin oxide Schottky contacts

W. Gao, A-S. Khan, P. R. Berger, R. G. Hunsperger, G. Zydzik, H. M. O'Bryan, D. Sivco, A. Y. Cho

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

A metal-semiconductor-metal (MSM) In0.53Ga0.47As photodiode using a transparent cadmium tin oxide (CTO) layer for the interdigitated electrodes was investigated. The transparent contact prevents shadowing of the active layer by the electrodes, thus allowing greater collection of incident light. The barrier height (φBn) of CTO on i-In0.52Al0.48As was determined to be 0.47 eV, while the Ti/Au barrier height was 0.595 eV. The reduced barrier height for CTO is caused by tunneling through the sputter-damaged cap layer. Responsivity for 1.3 μm incident light was 0.49 and 0.28 A/W, respectively, for the CTO and Ti/Au MSM photodiodes. No antireflection (AR) coating was utilized over the bare semiconductor surface. The CTO MSM photodiode shows a factor of almost two improvement in responsivity over conventional Ti/Au MSM photodiodes.

Original language	English
Pages (from-to)	1930-1932
Journal	Applied Physics Letters
Volume	65
Issue number	15
DOIs	https://doi.org/10.1063/1.112820
Publication status	Published - 1994
Externally published	Yes
Publication type	A1 Journal article-refereed

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@article{38505ad68bfb4b6bb292c0ff5c5d0bf5,

title = "In0.53Ga0.47As metal‐semiconductor‐metal photodiodes with transparent cadmium tin oxide Schottky contacts",

abstract = "A metal-semiconductor-metal (MSM) In0.53Ga0.47As photodiode using a transparent cadmium tin oxide (CTO) layer for the interdigitated electrodes was investigated. The transparent contact prevents shadowing of the active layer by the electrodes, thus allowing greater collection of incident light. The barrier height (φBn) of CTO on i-In0.52Al0.48As was determined to be 0.47 eV, while the Ti/Au barrier height was 0.595 eV. The reduced barrier height for CTO is caused by tunneling through the sputter-damaged cap layer. Responsivity for 1.3 μm incident light was 0.49 and 0.28 A/W, respectively, for the CTO and Ti/Au MSM photodiodes. No antireflection (AR) coating was utilized over the bare semiconductor surface. The CTO MSM photodiode shows a factor of almost two improvement in responsivity over conventional Ti/Au MSM photodiodes.",

author = "W. Gao and A-S. Khan and Berger, {P. R.} and Hunsperger, {R. G.} and G. Zydzik and O'Bryan, {H. M.} and D. Sivco and Cho, {A. Y.}",

year = "1994",

doi = "10.1063/1.112820",

language = "English",

volume = "65",

pages = "1930--1932",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "15",

}

TY - JOUR

T1 - In0.53Ga0.47As metal‐semiconductor‐metal photodiodes with transparent cadmium tin oxide Schottky contacts

AU - Gao, W.

AU - Khan, A-S.

AU - Berger, P. R.

AU - Hunsperger, R. G.

AU - Zydzik, G.

AU - O'Bryan, H. M.

AU - Sivco, D.

AU - Cho, A. Y.

PY - 1994

Y1 - 1994

N2 - A metal-semiconductor-metal (MSM) In0.53Ga0.47As photodiode using a transparent cadmium tin oxide (CTO) layer for the interdigitated electrodes was investigated. The transparent contact prevents shadowing of the active layer by the electrodes, thus allowing greater collection of incident light. The barrier height (φBn) of CTO on i-In0.52Al0.48As was determined to be 0.47 eV, while the Ti/Au barrier height was 0.595 eV. The reduced barrier height for CTO is caused by tunneling through the sputter-damaged cap layer. Responsivity for 1.3 μm incident light was 0.49 and 0.28 A/W, respectively, for the CTO and Ti/Au MSM photodiodes. No antireflection (AR) coating was utilized over the bare semiconductor surface. The CTO MSM photodiode shows a factor of almost two improvement in responsivity over conventional Ti/Au MSM photodiodes.

AB - A metal-semiconductor-metal (MSM) In0.53Ga0.47As photodiode using a transparent cadmium tin oxide (CTO) layer for the interdigitated electrodes was investigated. The transparent contact prevents shadowing of the active layer by the electrodes, thus allowing greater collection of incident light. The barrier height (φBn) of CTO on i-In0.52Al0.48As was determined to be 0.47 eV, while the Ti/Au barrier height was 0.595 eV. The reduced barrier height for CTO is caused by tunneling through the sputter-damaged cap layer. Responsivity for 1.3 μm incident light was 0.49 and 0.28 A/W, respectively, for the CTO and Ti/Au MSM photodiodes. No antireflection (AR) coating was utilized over the bare semiconductor surface. The CTO MSM photodiode shows a factor of almost two improvement in responsivity over conventional Ti/Au MSM photodiodes.

U2 - 10.1063/1.112820

DO - 10.1063/1.112820

M3 - Article

SN - 0003-6951

VL - 65

SP - 1930

EP - 1932

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

In0.53Ga0.47As metal‐semiconductor‐metal photodiodes with transparent cadmium tin oxide Schottky contacts

Abstract

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