Incorporation of group V elements in gas-source molecular beam epitaxy of Ga(alaind. x)In(alaind.1-x)As(al.x)P(1-y) with x=0.15 and y=0.33

K. Tappura

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)
    Translated title of the contributionIncorporation of group V elements in gas-source molecular beam epitaxy of Ga(alaind. x)In(alaind.1-x)As(al.x)P(1-y) with x=0.15 and y=0.33
    Original languageEnglish
    Pages (from-to)133-140
    JournalJournal of Crystal Growth
    Volume123
    Publication statusPublished - 1992
    Publication typeA1 Journal article-refereed

    Publication forum classification

    • No publication forum level

    Cite this