Translated title of the contribution | Incorporation of group V elements in gas-source molecular beam epitaxy of Ga(alaind. x)In(alaind.1-x)As(al.x)P(1-y) with x=0.15 and y=0.33 |
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Original language | English |
Pages (from-to) | 133-140 |
Journal | Journal of Crystal Growth |
Volume | 123 |
Publication status | Published - 1992 |
Publication type | A1 Journal article-refereed |
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