Influence of electron irradiation and postannealing on photoluminescence of GaInNas/GaAs quantum wells

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

3 Citations (Scopus)

Translated title of the contribution	Influence of electron irradiation and postannealing on photoluminescence of GaInNas/GaAs quantum wells
Original language	English
Title of host publication	International Semiconductor Conference, CAS 2004, Sinaia, Romania, October 4-6, 2004
Pages	217-220
Publication status	Published - 2004
Publication type	A4 Article in conference proceedings

Publication forum classification

@inproceedings{3219373f72404acbb67a19052afec56f,

title = "Influence of electron irradiation and postannealing on photoluminescence of GaInNas/GaAs quantum wells",

author = "E-M. Pavelescu and A. Gheorghiu and N. Baltateanu and T. Jouhti and V. Cimpoca and M. Pessa",

note = "Contribution: organisation=orc,FACT1=1",

year = "2004",

language = "English",

pages = "217--220",

booktitle = "International Semiconductor Conference, CAS 2004, Sinaia, Romania, October 4-6, 2004",

}

Influence of electron irradiation and postannealing on photoluminescence of GaInNas/GaAs quantum wells. / Pavelescu, E-M.; Gheorghiu, A.; Baltateanu, N. et al.
International Semiconductor Conference, CAS 2004, Sinaia, Romania, October 4-6, 2004. 2004. p. 217-220.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Influence of electron irradiation and postannealing on photoluminescence of GaInNas/GaAs quantum wells

AU - Pavelescu, E-M.

AU - Gheorghiu, A.

AU - Baltateanu, N.

AU - Jouhti, T.

AU - Cimpoca, V.

AU - Pessa, M.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2004

Y1 - 2004

M3 - Conference contribution

SP - 217

EP - 220

BT - International Semiconductor Conference, CAS 2004, Sinaia, Romania, October 4-6, 2004

ER -