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Influence of nitride and oxide cap layers upon the annealing of 1.3 um GaInNAs/GaAs quantum wells

  • H.F. Liu
  • , C.S. Peng
  • , J. Likonen
  • , T. Jouhti
  • , S. Karirinne
  • , J. Konttinen
  • , M. Pessa

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)
    Translated title of the contributionInfluence of nitride and oxide cap layers upon the annealing of 1.3 um GaInNAs/GaAs quantum wells
    Original languageEnglish
    Pages (from-to)4102-4104
    JournalJournal of Applied Physics
    Volume95
    Issue number8
    Publication statusPublished - 2004
    Publication typeA1 Journal article-refereed

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