InGaAs/GaAs/GaInP SCH-SQW lasers with low threshold current and high internal quantum efficiency

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Translated title of the contribution	InGaAs/GaAs/GaInP SCH-SQW lasers with low threshold current and high internal quantum efficiency
Original language	English
Pages (from-to)	595-597
Journal	Electronics Letters
Volume	28
Issue number	6
DOIs	https://doi.org/10.1049/el:19920375
Publication status	Published - 1992
Publication type	A1 Journal article-refereed

Publication forum classification

@article{ca6fc8dd59b24bf08bacd0c617a5d63a,

title = "InGaAs/GaAs/GaInP SCH-SQW lasers with low threshold current and high internal quantum efficiency",

author = "G. Zhang and J. N{\"a}ppi and K. V{\"a}nttinen and H. Asonen and M. Pessa",

note = "Contribution: organisation=fys,FACT1=1",

year = "1992",

doi = "10.1049/el:19920375",

language = "English",

volume = "28",

pages = "595--597",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons",

number = "6",

}

TY - JOUR

T1 - InGaAs/GaAs/GaInP SCH-SQW lasers with low threshold current and high internal quantum efficiency

AU - Zhang, G.

AU - Näppi, J.

AU - Vänttinen, K.

AU - Asonen, H.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1992

Y1 - 1992

U2 - 10.1049/el:19920375

DO - 10.1049/el:19920375

M3 - Article

SN - 0013-5194

VL - 28

SP - 595

EP - 597

JO - Electronics Letters

JF - Electronics Letters

IS - 6

ER -