InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

Paulo H. Moriya; Riccardo Casula; George A. Chappel; Daniele C. Parrotta; Sanna Ranta; Hermann Kahle; Mircea Guina; Jennifer E. Hastie

doi:10.1364/OE.416210

InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

Paulo H. Moriya, Riccardo Casula, George A. Chappel, Daniele C. Parrotta, Sanna Ranta, Hermann Kahle, Mircea Guina, Jennifer E. Hastie

Physics

Research output: Contribution to journal › Article › Scientific › peer-review

10 Citations (Scopus)

22 Downloads (Pure)

Abstract

We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM00) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <-130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.

Original language	English
Pages (from-to)	3258-3268
Number of pages	11
Journal	Optics Express
Volume	29
Issue number	3
DOIs	https://doi.org/10.1364/OE.416210
Publication status	Published - 2021
Publication type	A1 Journal article-refereed

Publication forum classification

Publication forum level 1

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

Access to Document

10.1364/OE.416210Licence: CC BY

InGaN-diode-pumped AlGaInP VECSEL 2021
CC BY
Final published version, 8.23 MBLicence: CC BY

http://urn.fi/URN:NBN:fi:tuni-202105265453Licence: CC BY

Data for: "InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm"
Moriya, P. (Creator), Casula, R. (Creator), Chappell, G. (Creator), Parrotta, D. C. (Creator), Ranta, S. (Creator), Kahle, H. (Creator), Guina, M. (Creator) & Hastie, J. (Creator), University of Strathclyde, 5 Jan 2021
DOI: 10.15129/c5a45a9b-cfd9-45b2-bf94-96145cc7cef4
Dataset

Cite this

@article{862084a9460d4937a5730a5ccb40ba0b,

title = "InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm",

abstract = "We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM00) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <-130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.",

author = "Moriya, {Paulo H.} and Riccardo Casula and Chappel, {George A.} and Parrotta, {Daniele C.} and Sanna Ranta and Hermann Kahle and Mircea Guina and Hastie, {Jennifer E.}",

year = "2021",

doi = "10.1364/OE.416210",

language = "English",

volume = "29",

pages = "3258--3268",

journal = "Optics Express",

issn = "1094-4087",

publisher = "OPTICAL SOC AMER",

number = "3",

}

TY - JOUR

T1 - InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

AU - Moriya, Paulo H.

AU - Casula, Riccardo

AU - Chappel, George A.

AU - Parrotta, Daniele C.

AU - Ranta, Sanna

AU - Kahle, Hermann

AU - Guina, Mircea

AU - Hastie, Jennifer E.

PY - 2021

Y1 - 2021

N2 - We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM00) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <-130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.

AB - We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM00) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <-130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.

U2 - 10.1364/OE.416210

DO - 10.1364/OE.416210

M3 - Article

C2 - 33770928

AN - SCOPUS:85099785470

SN - 1094-4087

VL - 29

SP - 3258

EP - 3268

JO - Optics Express

JF - Optics Express

IS - 3

ER -

InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

Abstract

Publication forum classification

ASJC Scopus subject areas

Access to Document

Fingerprint

Datasets

Data for: "InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm"

Cite this