Interfacial oxide growth at silicon/high-k oxide interfaces: First principles modeling of the Si-HfO2 interface

M.H. Hakala, A.S. Foster, J.L. Gavartin, P. Havu, M.J. Puska, R. M. Nieminen

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Translated title of the contributionInterfacial oxide growth at silicon/high-k oxide interfaces: First principles modeling of the Si-HfO2 interface
Original languageEnglish
Pages (from-to)7 p
JournalJournal of Applied Physics
Volume100
Issue number4, 043708
DOIs
Publication statusPublished - 2006
Externally publishedYes
Publication typeA1 Journal article-refereed

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