Interfacial quality of strained-layer InGaAs/GaAs quantum well lasers grown by gas-source molecular beam epitaxy

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Translated title of the contribution	Interfacial quality of strained-layer InGaAs/GaAs quantum well lasers grown by gas-source molecular beam epitaxy
Original language	English
Pages (from-to)	153-159
Journal	Mat. Res. Soc. Symp. Proc.
Volume	281
Publication status	Published - 1993
Publication type	A1 Journal article-refereed

Publication forum classification

@article{67597f21fe124edf861c6c206c0e054f,

title = "Interfacial quality of strained-layer InGaAs/GaAs quantum well lasers grown by gas-source molecular beam epitaxy",

author = "G. Zhang and A. Ovtchinnikov and M. Pessa",

note = "Contribution: organisation=fys,FACT1=1",

year = "1993",

language = "English",

volume = "281",

pages = "153--159",

journal = "Mat. Res. Soc. Symp. Proc.",

}