@article{e17446b416504eecaaddfd269e4ed404,
title = "Investigation of Switching Time in GaN/AlN Resonant Tunneling Diodes by Experiments and P-SPICE Models",
abstract = "The experimental and simulated switching behavior across the negative differential resistance (NDR) region of GaN/AlN double-barrier resonant tunneling diodes (RTDs) is presented. The shortest 10%-90% experimental switching time was ∼55 ps. The experimental results are also studied with P-SPICE circuit models, which show that the relatively low peak-to-valley current ratio (∼1.5), relatively high specific contact resistance (≥1 × 10-6 Ω-cm2), and relatively large specific capacitance limit the switching time.",
keywords = "GaN/AlN, heterostructure, measurement, modeling, P-SPICE, resonant tunneling diode (RTD), switching time",
author = "W.-D. Zhang and Growden, {T. A.} and Storm, {D. F.} and Meyer, {D. J.} and Berger, {P. R.} and Brown, {E. R.}",
note = "Funding Information: Manuscript received September 1, 2019; revised October 22, 2019; accepted November 18, 2019. Date of publication December 16, 2019; date of current version December 30, 2019. This work was supported in part by the U.S. Office of Naval Research through the Devices and Architectures for THz Electronics (DATE) Multidisciplinary University Research Initiative (MURI) (program manager Dr. P. Maki) under Grant N00014-11-1-0721, in part by the Naval Research Laboratory (NRL) Base program, and in part by the National Science Foundation (program director Dr. D. Pavlidis) under Grant 1711733 and Grant 1711738. The review of this article was arranged by Editor P. J. Fay. (Corresponding author: W.-D. Zhang.) W.-D. Zhang and E. R. Brown are with the Department of Physics, Wright State University, Dayton, OH 45435 USA, and also with the Department of Electrical Engineering, Wright State University, Dayton, OH 45435 USA (e-mail:
[email protected];
[email protected]). Publisher Copyright: {\textcopyright} 1963-2012 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2020",
month = jan,
doi = "10.1109/TED.2019.2955360",
language = "English",
volume = "67",
pages = "75--79",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",
}